Improved high-voltage lateral RESURF MOSFETs in 4H-SiC

被引：32

作者：

Banerjee, S ^{[1
]}

Chatty, K ^{[1
]}

Chow, TP ^{[1
]}

Gutmann, RJ ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Ctr Integrated Elect & Elect Mfg, Troy, NY 12180 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 05期

基金：

美国国家科学基金会;

关键词：

breakdown; lateral device; on-resistance; power MOSFET; RESURF; silicon carbide;

D O I：

10.1109/55.919231

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-voltage lateral RESURF metal oxide semiconductor held effect transistors (MOSFETs) in 4H-SiC have been experimentally demonstrated, that block 900 V with a specific on-resistance of 0.5 Omega -cm(2). The RESURF dose in 4H-SiC to maximize the avalanche breakdown voltage is almost an order of magnitude higher than that of silicon; however this high RESURF dose leads to oxide breakdown and reliability concerns in thin (100-200 nm) gate oxide devices due to high electric field (>3-4 MV/cm) in the oxide, Lighter RESURF doses and/or thicker gate asides are required in SIC lateral MOSFETs to achieve highest breakdown voltage capability.

引用

页码：209 / 211

页数：3