Improved high-voltage lateral RESURF MOSFETs in 4H-SiC

被引：32

作者：

Banerjee, S ^{[1
]}

Chatty, K ^{[1
]}

Chow, TP ^{[1
]}

Gutmann, RJ ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Ctr Integrated Elect & Elect Mfg, Troy, NY 12180 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 05期

基金：

美国国家科学基金会;

关键词：

breakdown; lateral device; on-resistance; power MOSFET; RESURF; silicon carbide;

D O I：

10.1109/55.919231

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-voltage lateral RESURF metal oxide semiconductor held effect transistors (MOSFETs) in 4H-SiC have been experimentally demonstrated, that block 900 V with a specific on-resistance of 0.5 Omega -cm(2). The RESURF dose in 4H-SiC to maximize the avalanche breakdown voltage is almost an order of magnitude higher than that of silicon; however this high RESURF dose leads to oxide breakdown and reliability concerns in thin (100-200 nm) gate oxide devices due to high electric field (>3-4 MV/cm) in the oxide, Lighter RESURF doses and/or thicker gate asides are required in SIC lateral MOSFETs to achieve highest breakdown voltage capability.

引用

页码：209 / 211

页数：3

共 13 条

[1] 1.1 kV 4H-SiC power UMOSFET's [J].

Agarwal, AK ;

Casady, JB ;

Rowland, LB ;

Valek, WF ;

White, MH ;

Brandt, CD .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (12) :586-588

[2] Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors [J].

Agarwal, AK ;

Seshadri, S ;

Rowland, LB .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (12) :592-594

[3] Investigation of lateral RESURF, 6H-SiC MOSFETs [J].

Agarwal, AK ;

Saks, NS ;

Mani, SS ;

Hegde, VS ;

Sanger, PA .

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :1307-1310

[4]

Amato M., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P736

[5]

[Anonymous], 1979, IEDM

[6] Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide [J].

Capano, MA ;

Cooper, JA ;

Melloch, MR ;

Saxler, A ;

Mitchel, WC .

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 :703-706

[7] High-voltage lateral RESURF MOSFET's on 4H-SiC [J].

Chatty, K ;

Banerjee, S ;

Chow, TP ;

Gutmann, RJ .

IEEE ELECTRON DEVICE LETTERS, 2000, 21 (07) :356-358

[8]

CHOW TP, 1997, P MRS FALL M BOST MA

[9] LATERAL DMOS POWER TRANSISTOR DESIGN [J].

COLAK, S ;

SINGER, B ;

STUPP, E .

ELECTRON DEVICE LETTERS, 1980, 1 (04) :51-53

[10] Insulator investigation on SiC for improved reliability [J].

Lipkin, LA ;

Palmour, JW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (03) :525-532

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