Structural Defects in Graphene

被引:45
作者
Banhart, Florian [1 ]
Kotakoski, Jani [2 ]
Krasheninnikov, Arkady V. [2 ,3 ]
机构
[1] Univ Strasbourg, CNRS, UMR 7504, Inst Phys & Chim Mat, F-67034 Strasbourg, France
[2] Univ Helsinki, Dept Phys, FI-00014 Helsinki, Finland
[3] Aalto Univ, Dept Appl Phys, FI-00076 Aalto, Finland
基金
芬兰科学院;
关键词
carbon; graphene; defects; vacancies; interstitials; point defects; line defects; lattice reconstruction; electronic properties; ROOM-TEMPERATURE FERROMAGNETISM; CARBON NANOTUBES; ELECTRONIC-STRUCTURE; VACANCY FORMATION; BORON-NITRIDE; METAL ATOMS; TRANSPORT; GRAPHITE; IRRADIATION; DIFFUSION;
D O I
10.1021/nn102598m
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Graphene is one of the most promising materials in nanotechnology. The electronic and mechanical properties of graphene samples with high perfection of the atomic lattice are outstanding, but structural defects, which may appear during growth Or processing, deteriorate the performance of graphene-based devices. However, deviations from perfection can be useful in some applications, as they make it possible to tailor the local properties of graphene and to achieve new functionalities. In this article, the present knowledge about point and line defects in graphene are reviewed Particular emphasis is put on the unique ability of graphene to reconstruct its lattice around intrinsic defects, leading to interesting effects and potential applications. Extrinsic defects such as foreign atoms which are of equally high importance for designing graphene-based devices With dedicated properties are also discussed.
引用
收藏
页码:26 / 41
页数:16
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