Electronic properties of ultrathin hydrogenated amorphous silicon

被引：18
作者：
Nunomura, Shota [1 ]
Sakata, Isao [1 ]
Matsubara, Koji [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta, Tsukuba, Ibaraki 3058568, Japan
来源：
APPLIED PHYSICS EXPRESS | 2017年 / 10卷 / 08期
关键词：
A-SI-H; CONSTANT-PHOTOCURRENT METHOD; HETEROJUNCTION SOLAR-CELL; DEEP DEFECT DENSITY; CRYSTALLINE SILICON; MATRIX-ELEMENT; FILMS; SPECTROSCOPY; STATES; EFFICIENCY;
D O I：
10.7567/APEX.10.081401
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electronic properties of ultrathin hydrogenated amorphous silicon (a-Si: H) films have been studied by using a constant photocurrent measurement and an optical pump-probe technique. We find that, for ultrathin a-Si: H of less than or similar to 10 nm, the bandgap is widened, the band tail is broadened, and the number of deep-level defect states is increased significantly. The number of gap states is reduced for ultrathin films prepared at a growth temperature of approximate to 140 degrees C, where carrier trapping is suppressed and carrier transport is improved. For those films, an Urbach energy of approximate to 70meV, a deep-level defect absorption of 50 +/- 20cm(-1) at 1.37 eV, and a trapped electron density of approximate to 6 x 10(17)cm(-3) are obtained. (C) 2017 The Japan Society of Applied Physics
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页数：4
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