An Experimental Study of Carbon-Doped GaN via Solid-Gas Reaction Route and Investigation of Its Defect-Related Luminescence

被引：1

作者：

Singh, Reetendra ^{[1
,2
]}

Roy, Anand ^{[1
,2
]}

Rao, C. N. R. ^{[1
,2
]}

机构：

[1] Jawaharlal Nehru Ctr Adv Sci Res, New Chem Unit, Int Ctr Mat Sci, Bangalore 560064, Karnataka, India

[2] Jawaharlal Nehru Ctr Adv Sci Res, Sch Adv Mat, Bangalore 560064, Karnataka, India

来源：

ACS APPLIED ELECTRONIC MATERIALS | 2022年 / 4卷 / 06期

关键词：

impurities; nitrides; gallium nitride; doped gallium nitride; solid-state reaction; defects; materials; PHOTOLUMINESCENCE;

D O I：

10.1021/acsaelm.2c00619

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carbon-doped gallium nitride (GaN) is a very interesting material with applications in optoelectronic devices, and studies related to their defects offer insights regarding possible transitions based on the nature of the defects. A simple solid-gas reaction route has yielded carbon-doped GaN. An isolated C-N defect state has been observed by spectroscopic tools (Fourier transform infrared spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy) along with the C-N-O-N complex formation. In addition to the red shift in the fundamental absorption band, a transition band was observed at similar to 3.05 eV. A complete quenching of blue luminescence (BL) related to an oxygen defect and the appearance of a carbon-related yellow luminescence (YL) is shown in strongly doped samples. The origin of this defect-related YL in C-doped GaN is attributed to the carbon-defect C-N (-1 charged) level transitions confirmed by absorption energy, photoluminescence (PL) peak position, and zero-phonon line.

引用

页码：3147 / 3153

页数：7