Reaction-Diffusion Mechanism of Synthesis in the Diamond-Silicon Carbide System

被引：17

作者：

Shevchenko, V. Ya ^{[1
]}

Perevislov, S. N. ^{[1
]}

机构：

[1] Russian Acad Sci, Grebenshchikov Inst Silicate Chem, St Petersburg 199034, Russia

来源：

RUSSIAN JOURNAL OF INORGANIC CHEMISTRY | 2021年 / 66卷 / 08期

基金：

俄罗斯科学基金会;

关键词：

Turing mechanism; diamond graphitization; microstructure; mechanical performance; HIGH-PRESSURE; SIC COMPOSITES; INFILTRATION; MICROSTRUCTURE;

D O I：

10.1134/S003602362108026X

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Diamond-SiC composite materials were obtained by infiltration with gaseous and liquid Si. The mechanisms of the infiltration and consolidation of the diamond-silicon carbide composites were investigated. The effect of the Turing reaction-diffusion mechanism on the sintering of the diamond-SiC materials, the formation of the microstructure, and the mechanical performance was shown.

引用

页码：1107 / 1114

页数：8

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