Reaction-Diffusion Mechanism of Synthesis in the Diamond-Silicon Carbide System

被引：15
作者：
Shevchenko, V. Ya [1 ]
Perevislov, S. N. [1 ]
机构：
[1] Russian Acad Sci, Grebenshchikov Inst Silicate Chem, St Petersburg 199034, Russia
来源：
RUSSIAN JOURNAL OF INORGANIC CHEMISTRY | 2021年 / 66卷 / 08期
基金：
俄罗斯科学基金会;
关键词：
Turing mechanism; diamond graphitization; microstructure; mechanical performance; HIGH-PRESSURE; SIC COMPOSITES; INFILTRATION; MICROSTRUCTURE;
D O I：
10.1134/S003602362108026X
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
Diamond-SiC composite materials were obtained by infiltration with gaseous and liquid Si. The mechanisms of the infiltration and consolidation of the diamond-silicon carbide composites were investigated. The effect of the Turing reaction-diffusion mechanism on the sintering of the diamond-SiC materials, the formation of the microstructure, and the mechanical performance was shown.
引用
收藏
页码：1107 / 1114
页数：8
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