Enhancing thermoelectric performance of Sn0.5Ge0.5Te via doping with In/Zn, In/Sb and In/Bi

被引：3

作者：

Song, Shaochang ^{[1
]}

Yang, Zan ^{[1
]}

Huang, Yuyang ^{[1
]}

Tseng, Yu-Chih ^{[2
]}

Valiyaveettil, Suneesh Meledath ^{[3
,4
]}

Chen, Kuei-Hsien ^{[3
,4
]}

Mozharivskyj, Yurij ^{[1
]}

机构：

[1] McMaster Univ, Dept Chem & Chem Biol, Hamilton, ON, Canada

[2] Nat Resources Canada, CanmetMATERIALS, Hamilton, ON, Canada

[3] Acad Sinica, Inst Atom & Mol Sci, Taipei 10617, Taiwan

[4] Natl Cent Univ, Dept Phys, Taoyuan 32001, Taiwan

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 2021年 / 302卷

基金：

加拿大自然科学与工程研究理事会;

关键词：

Tin germanium telluride; Thermoelectric properties; Electronic structure; Resonant states; Band inversion; Impurity scattering of phonons; PHASE-TRANSITION TEMPERATURE; THERMAL-CONDUCTIVITY; ELECTRONIC-STRUCTURE; BAND CONVERGENCE; SNTE; GETE; SCATTERING; BI;

D O I：

10.1016/j.jssc.2021.122444

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Tin germanium tellurides, (SnGe)Te, are developed as a potential substitute for the lead telluride (PbTe) for thermoelectric power generation. SnTe and PbTe share similar crystal and electronic structures, however, SnTe has a much higher lattice thermal conductivity and a much lower Seebeck coefficient. Alloying SnTe with Ge and doping with other elements significantly improves its performance. This work provides a comparative study of the thermoelectric properties for the Sn0.5Ge0.5Te phases doped with In, and subsequently with Zn, Sb and Bi. The In doping on the Sn/Ge site induces resonant levels around the Fermi level, and thus, enhances the thermopower. Further doping with Sb and Bi in (Sn0.5Ge0.5)(0.98)In0.2Te leads to the valence band convergence (thus increasing the thermopower) and also optimizes the thermal conductivity. Comparison of the results for (Sn0.5Ge0.5)(0.89)In0.02Bi0.06Te and pristine SnTe reveal significant improvements in the average and highest ZT values by 446% (0.71 vs. 0.13) and 125% (0.80 vs. 0.36), respectively, within 100-500 degrees C.

引用

页数：10

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