Charge carrier traps in organic semiconductors: a review on the underlying physics and impact on electronic devices

被引:529
作者
Haneef, Hamna F. [1 ,2 ]
Zeidell, Andrew M. [1 ,2 ]
Jurchescu, Oana D. [1 ,2 ]
机构
[1] Wake Forest Univ, Dept Phys, Winston Salem, NC 27109 USA
[2] Wake Forest Univ, Ctr Funct Mat, Winston Salem, NC 27109 USA
基金
美国国家科学基金会;
关键词
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; DENSITY-OF-STATES; LEVEL TRANSIENT SPECTROSCOPY; LIGHT-EMITTING-DIODES; HIGH-MOBILITY; LIMITED CURRENTS; TEMPERATURE-DEPENDENCE; IMPEDANCE SPECTROSCOPY; SINGLE-CRYSTALS;
D O I
10.1039/c9tc05695e
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The weak intermolecular interactions inherent in organic semiconductors make them susceptible to defect formation, resulting in localized states in the band-gap that can trap charge carriers at different timescales. Charge carrier trapping is thus ubiquitous in organic semiconductors and can have a profound impact on their performance when incorporated into optoelectronic devices. This review provides a comprehensive overview on the phenomenon of charge carrier trapping in organic semiconductors, with emphasis on the underlying physical processes and its impact on device operation. We first define the concept of charge carrier trap, then outline and categorize different origins of traps. Next, we discuss their impact on the mechanism of charge transport and the performance of electronic devices. Progress in the filed in terms of characterization and detection of charge carrier traps is reviewed together with insights on future direction of research. Finally, a discussion on the exploitation of traps in memory and sensing applications is provided.
引用
收藏
页码:759 / 787
页数:29
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