The influence of the pressure and temperature on the light emission of the ZnO

被引:11
作者
Dantas, N. O. [1 ]
Couto dos Santos, M. A. [1 ]
Cunha, F. [1 ]
Macedo, M. A. [1 ]
机构
[1] Univ Fed Sergipe, Dept Phys, BR-49100000 Sao Cristovao, SE, Brazil
关键词
ZnO; proteic sol-gel process; light emission;
D O I
10.1016/j.physb.2007.05.017
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A new route for the preparation of zinc oxide powder is described along with its characterization. A proteic sol was prepared dissolving zinc nitrate in filtered coconut water. After calcination at 1000 degrees C. the powder was compressed to 1.3 x 10(8) Pa and ZnO pellets were obtained. The emission spectra were recorded under UV excitation at 325 and 400 nm. The powder showed no spectroscopic response, whereas one peak around 396 nin was observed for the pressed powder (pellet with no heat treatment). The pellets were then annealed for 24h at 500, 800 and 1000 degrees C. In the first case, bands at 396 and 440nm and a structure of narrow peaks around 480nm (oxygen vacancies) were observed. Increasing the annealing temperature led to a decrease in the intensity of the emissions at 440 and 480 nm. We propose that the high pressure induces a red-shift in the UV region of the ZnO nanopowder emission peaks to 396 nm. This is an indication that the ZnO nanopowder treated under pressure and sintering temperature exhibits the spectroscopic behavior characteristic of the ZnO single crystal. The disappearance of the 440 and 480 nm lines indicate the reduction of oxygen vacancies. The atomic force micrographs suggest a coalescence thermal point. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:291 / 293
页数:3
相关论文
共 9 条
  • [1] DOSSANTOS MAC, 1992, THESIS
  • [2] Sensor photoresponse of thin-film oxides of zinc and titanium to oxygen gas
    Golego, N
    Studenikin, SA
    Cocivera, M
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (04) : 1592 - 1594
  • [3] Structural and optical properties of ZnO films with different thicknesses grown on sapphire by MOCVD
    Hou Chang-min
    Huang Ke-ke
    Gao Zhong-min
    Li Xiang-shan
    Feng Shou-hua
    Zhang Yuan-tao
    Du Guo-tong
    [J]. CHEMICAL RESEARCH IN CHINESE UNIVERSITIES, 2006, 22 (05) : 552 - 555
  • [4] Review of photoluminescence performance of nano-sized semiconductor materials and its relationships with photocatalytic activity
    Jing Liqiang
    Qu Yichun
    Wang Baiqi
    Li Shudan
    Jiang Baojiang
    Yang Libin
    Fu Wei
    Fu Honggang
    Sun Jiazhong
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2006, 90 (12) : 1773 - 1787
  • [5] Macedo M., Patent pending, Patent No. [0203876-5/BR, 0203876]
  • [6] ZnO thin film sensor
    Mitra, P
    Chatterjee, AP
    Maiti, HS
    [J]. MATERIALS LETTERS, 1998, 35 (1-2) : 33 - 38
  • [7] Gas sensitivity of ZnO based thick film sensor to NH3 at room temperature
    Rao, GST
    Rao, DT
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 1999, 55 (2-3) : 166 - 169
  • [8] Nanostructures of zinc oxide
    Wang, Zhong Lin
    [J]. MATERIALS TODAY, 2004, 7 (06) : 26 - 33
  • [9] A study of photoinduced charge transfer at the interface of ZnO/Azo
    Yang, M
    Wang, DJ
    Lin, YH
    Li, ZH
    Zhang, QL
    [J]. MATERIALS CHEMISTRY AND PHYSICS, 2004, 88 (2-3) : 333 - 338