Donor-Acceptor Compensated ZnO Semiconductor for Photoelectrochemical Biosensors

被引：49

作者：

Chen, Delun ^{[1
]}

Zou, Xue ^{[1
]}

Dong, Fan ^{[1
]}

Zhen, Chao ^{[2
]}

Xiao, Dan ^{[3
,4
]}

Wang, Xiaohong ^{[1
]}

Wu, Qiang ^{[5
]}

Cao, Yang ^{[1
,6
]}

Tu, Jinchun ^{[1
]}

机构：

[1] Hainan Univ, Key Lab Adv Mat Trop Isl Resources, State Key Lab Marine Resource Utilizat South Chin, Haikou 570228, Hainan, Peoples R China

[2] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China

[3] Sichuan Univ, Key Lab Green & Technol, Minist Educ, Coll Chem, Chengdu 610065, Peoples R China

[4] Sichuan Univ, Coll Chem Engn, Chengdu 610065, Peoples R China

[5] Hainan Med Univ, Sch Trop Med & Lab Med, MOE Key Lab Emergency & Trauma, Haikou 571199, Hainan, Peoples R China

[6] Qiongtai Normal Univ, Key Lab Child Cognit & Behav Dev Hainan Prov, Haikou 571127, Hainan, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2021年 / 13卷 / 28期

基金：

中国国家自然科学基金;

关键词：

zinc oxide; donor-acceptor compensated semiconductors; photoelectrochemical biosensors; oxygen vacancies; carbon doping; OXYGEN VACANCIES; AT-ZNO; NANOPARTICLES; ENHANCEMENT; PERFORMANCE; NANOTUBE; COMPOSITES; DEPOSITION; OXIDATION; NANORODS;

D O I：

10.1021/acsami.1c07499

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Hindering the recombination of a photogenerated carrier is a crucial method to enhance the photoelectrochemical performance of ZnO due to its high exciton binding energy. Herein, the intramolecular donor-acceptor compensated semiconductor ZnO (I-D/A ZnO), introducing C dopants and oxygen vacancies, was prepared with the assistance of ascorbic acid (AA). According to the DFT calculations, the asymmetry DOS could lead to the longer carrier lifetime and the smaller electron transfer resistance. Then, the photoelectrochemical biosensor toward glucose was regarded as a model to discuss the application of ZnO in biosensors. As a result, the biosensor based on ID/A ZnO showed good performance with high sensitivity, low limit of detection, and fine anti-interference, meaning that I-D/A ZnO is a promising semiconductor for photoelectrochemical biosensors.

引用

页码：33006 / 33014

页数：9

共 49 条

[1] Oxygen vacancy induced band gap narrowing of ZnO nanostructures by an electrochemically active biofilm [J].