High voltage high power klystron drivers using flexible solid state IGBT modules

被引:0
|
作者
Richter-Sand, RJ [1 ]
Adler, RJ [1 ]
Rust, K [1 ]
机构
[1] N Star Res Corp, Albuquerque, NM 87109 USA
关键词
D O I
10.1109/MODSYM.2000.896191
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The progress made in demonstrating the application of solid state switching to accelerator power systems was summarized. The development of a klystron drive system for an ion linac which used a minimal number of insulated gate bipolar transistor components to produce average power levels was also discussed.
引用
收藏
页码:165 / 170
页数:6
相关论文
共 50 条
  • [41] Chip Metallization Aging Monitoring with Induced Voltage veE between Kelvin and Power Emitter for High Power IGBT Modules
    Chen, Yu
    Meng, Fanxu
    Zhu, Ankang
    Li, Wuhua
    He, Xiangning
    2020 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2020, : 4012 - 4016
  • [42] Analytic Calculation Method of Power Loss for High Voltage and High Power IGBT Device
    Ning, Jian
    Hao, Bin
    Li, Jianhui
    Zhao, Zhibin
    PROCEEDINGS OF 2023 INTERNATIONAL CONFERENCE ON WIRELESS POWER TRANSFER, VOL 4, ICWPT 2023, 2024, 1161 : 366 - 373
  • [43] Fast On-state Voltage Measurement by a Passive Voltage Clamping Circuit for High Voltage Power Modules
    Wang, Tianjian
    Wang, Jianpeng
    Wu, Yuwei
    Gao, Kai
    Zhang, Jin
    Wang, Laili
    2022 4TH INTERNATIONAL CONFERENCE ON SMART POWER & INTERNET ENERGY SYSTEMS, SPIES, 2022, : 14 - 19
  • [44] IGBT power modules thermal characterization : what is the optimum between a low current high voltage or a high current low voltage test condition for the same electrical power
    Azzopardi, S
    Woirgard, E
    Vinassa, JM
    Briat, O
    Zardini, C
    MICROELECTRONICS RELIABILITY, 2003, 43 (9-11) : 1901 - 1906
  • [45] High frequency/high voltage solid state body power supplies for CPD gyrotrons
    Bonicelli, T
    Claesen, R
    Coletti, A
    Mondino, PL
    Pretelli, M
    Santinelli, M
    Sita, L
    Taddia, G
    FUSION ENGINEERING AND DESIGN, 2003, 66-68 : 543 - 548
  • [46] Dual-voltage high power converter for a distributed power system in heavy traction, using high-voltage IGBT's.
    Fratelli, L
    Giannini, G
    PESC 96 RECORD - 27TH ANNUAL IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS I AND II, 1996, : 1414 - 1419
  • [47] Review of High Voltage High Power Press Pack IGBT Package Technology
    Tang X.
    Zhang P.
    Chen Z.
    Li J.
    Wen J.
    Pan Y.
    Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering, 2019, 39 (12): : 3622 - 3637
  • [48] Lateral IGBT in thin SOI for high voltage, high speed power IC
    Leung, YK
    Paul, AK
    Plummer, JD
    Wong, SS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (10) : 2251 - 2254
  • [49] High voltage, high speed lateral IGBT in thin SOI for power IC
    Leung, YK
    Kuehne, SC
    Huang, VSK
    Nguyen, CT
    Paul, AK
    Plummer, JD
    Wong, SS
    1996 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 1996, : 132 - 133
  • [50] Junction Temperature Extraction Approach With Turn-Off Delay Time for High-Voltage High-Power IGBT Modules
    Luo, Haoze
    Chen, Yuxiang
    Sun, Pengfei
    Li, Wuhua
    He, Xiangning
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2016, 31 (07) : 5122 - 5132