Heavy ion induced single event effects in semiconductor device

被引：7

作者：

Liu, J ^{[1
]}

Ma, F ^{[1
]}

Hou, MD ^{[1
]}

Sun, YM ^{[1
]}

Quan, JM ^{[1
]}

Zhou, YP ^{[1
]}

Zhong, YJ ^{[1
]}

Fan, JD ^{[1
]}

Chen, ZY ^{[1
]}

Feng, FY ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1998年 / 135卷 / 1-4期

关键词：

single event effect; heavy ion bombardment; large scale integrate circuit;

D O I：

10.1016/S0168-583X(97)00598-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Cosmic ray induced single event effects (SEE) on large scale integrate (LSI) circuits have become an important topic being investigated extensively by the scientists in spaceborne electronics. This paper presents the ground-testing results of these effects on four different devices used in a satellite. Three of them, Harris 80C86, Intel 8086 and IDT7164SRAM have been tested to suffer single event upset (SEU) and multiple-bit upsets (MBU) under 2.3 MeV/u Ar ion bombardment. MBU in IDT7164 SRAM was found to depend on the dose rate. The single event latchup (SEL) in IDT7164 SRAM and XICOR28C64 (EPROM)-P-2 was measured, too. The results are explained in terms of the mechanism of charge collection. SEE data obtained from this work are used to predict the event rates of the flight devices in space. (C) 1998 Elsevier Science B.V.

引用

页码：239 / 243

页数：5

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