Improved performance of gate-last FDSOI tunnel field-effect-transistors (TFETs) with modulating Al2O3 composition in atomic layer deposited HfAlOx gate dielectrics

被引：7
|
作者：
Lim, Donghwan [1 ]
Lee, Jae Ho [1 ]
Choi, Changhwan [1 ]
机构：
[1] Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South Korea
来源：
MICROELECTRONIC ENGINEERING | 2017年 / 178卷
关键词：
TFET; Subthreshold swing; Hafnium aluminum oxide; Atomic layer deposition;
D O I：
10.1016/j.mee.2017.05.039
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have studied the electrical characteristics of both n-type and p-type fully depleted silicon on insulator (FDSOI) tunnel field-effect transistors (TFETs) by modulating Al2O3 fraction (25%, 50%) within atomic layer deposited HfAlOx gate dielectric. Compared to HfO2 alone, lower subthreshold swing (S.S), higher I-on,/I-off, and stronger threshold voltage (V-th) immunity against electrical stress are obtained for both n-type and p-type TFETs by adopting nano-laminated atomic layer deposited HfAlOx, attributed to the increased band gap and interfacial layer scavenging effect. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：266 / 270
页数：5
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