Improved performance of gate-last FDSOI tunnel field-effect-transistors (TFETs) with modulating Al2O3 composition in atomic layer deposited HfAlOx gate dielectrics

被引：7
|
作者：
Lim, Donghwan [1 ]
Lee, Jae Ho [1 ]
Choi, Changhwan [1 ]
机构：
[1] Hanyang Univ, Div Mat Sci & Engn, Seoul 04763, South Korea
来源：
MICROELECTRONIC ENGINEERING | 2017年 / 178卷
关键词：
TFET; Subthreshold swing; Hafnium aluminum oxide; Atomic layer deposition;
D O I：
10.1016/j.mee.2017.05.039
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have studied the electrical characteristics of both n-type and p-type fully depleted silicon on insulator (FDSOI) tunnel field-effect transistors (TFETs) by modulating Al2O3 fraction (25%, 50%) within atomic layer deposited HfAlOx gate dielectric. Compared to HfO2 alone, lower subthreshold swing (S.S), higher I-on,/I-off, and stronger threshold voltage (V-th) immunity against electrical stress are obtained for both n-type and p-type TFETs by adopting nano-laminated atomic layer deposited HfAlOx, attributed to the increased band gap and interfacial layer scavenging effect. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：266 / 270
页数：5
相关论文
共 36 条
  • [1] Metal-oxide-semiconductor field-effect transistors on GaAs (111)A surface with atomic-layer-deposited Al2O3 as gate dielectrics
    Xu, M.
    Wu, Y. Q.
    Koybasi, O.
    Shen, T.
    Ye, P. D.
    APPLIED PHYSICS LETTERS, 2009, 94 (21)
  • [2] In0.53Ga0.47As n-metal-oxide-semiconductor field effect transistors with atomic layer deposited Al2O3, HfO2, and LaAlO3 gate dielectrics
    Zhao, Han
    Yum, Jung Hwan
    Chen, Yen-Ting
    Lee, Jack C.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (04): : 2024 - 2027
  • [3] A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric
    冯倩
    邢韬
    王强
    冯庆
    李倩
    毕志伟
    张进成
    郝跃
    Chinese Physics B, 2012, (01) : 453 - 457
  • [4] A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric
    Feng Qian
    Xing Tao
    Wang Qiang
    Feng Qing
    Li Qian
    Bi Zhi-Wei
    Zhang Jin-Cheng
    Hao Yue
    CHINESE PHYSICS B, 2012, 21 (01)
  • [5] Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
    Negara, M. A.
    Kitano, M.
    Long, R. D.
    McIntyre, P. C.
    ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (32) : 21089 - 21094
  • [6] Gate hysteresis originating from atomic layer deposition of Al2O3 onto suspended carbon nanotube field-effect transistors
    Muoth, Matthias
    Doering, Valentin
    Hierold, Christofer
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2011, 248 (11): : 2664 - 2667
  • [7] Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H-SiC
    Suri, Rahul
    Kirkpatrick, Casey J.
    Lichtenwalner, Daniel J.
    Misra, Veena
    APPLIED PHYSICS LETTERS, 2010, 96 (04)
  • [8] MoS2 Dual-Gate MOSFET With Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric
    Liu, Han
    Ye, Peide D.
    IEEE ELECTRON DEVICE LETTERS, 2012, 33 (04) : 546 - 548
  • [9] Band alignment and interfacial properties of atomic layer deposited (TiO2)x(Al2O3)1−x gate dielectrics on Ge
    Xue-Fei Li
    Ying-Ying Fu
    Xiao-Jie Liu
    Ai-Dong Li
    Hui Li
    Di Wu
    Applied Physics A, 2011, 105 : 763 - 767
  • [10] Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer
    Xing Wang
    Hong-Xia Liu
    Chen-Xi Fei
    Shu-Ying Yin
    Xiao-Jiao Fan
    Nanoscale Research Letters, 2015, 10
1234