Diode-pumped laser performance of Tm:Sc2SiO5 crystal at 1971 nm

被引：6

作者：

Liu, Bin ^{[1
]}

Zheng, Li-He ^{[2
]}

Wang, Qing-Guo ^{[1
,3
]}

Liu, Jun-Fang ^{[4
]}

Su, Liang-Bi ^{[2
]}

Tang, Hui-Li ^{[1
,3
]}

Liu, Jie ^{[5
]}

Fan, Xiu-Wei ^{[5
]}

Wu, Feng ^{[1
,3
]}

Luo, Ping ^{[1
,3
]}

Zhao, Heng-Yu ^{[1
]}

Shi, Jiao-Jiao ^{[1
]}

He, Nuo-Tian ^{[1
]}

Li, Na ^{[1
]}

Li, Qiu ^{[1
]}

Guo, Chao ^{[1
]}

Xu, Xiao-Dong ^{[6
]}

Wang, Zhan-Shan ^{[1
]}

Xu, Jun ^{[1
,3
]}

机构：

[1] Tongji Univ, Inst Adv Study, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Transparent & Optofunct Adv Inorgan Mat, Shanghai 201800, Peoples R China

[3] Shanghai Engn Res Ctr Sapphire Crystals, Shanghai 201899, Peoples R China

[4] Tongji Univ, Sch Mat Sci & Engn, Shanghai 200092, Peoples R China

[5] Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Shandong, Peoples R China

[6] Jiangsu Normal Univ, Sch Phys & Elect Engn, Jiangsu Key Lab Adv Laser Mat & Devices, Xuzhou 221116, Peoples R China

来源：

CHINESE PHYSICS B | 2017年 / 26卷 / 08期

基金：

中国国家自然科学基金;

关键词：

diode-pumped lasers; laser materials; crystal growth; SPECTROSCOPIC PROPERTIES; MODE-LOCKING; OPERATION; EFFICIENT;

D O I：

10.1088/1674-1056/26/8/084203

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The 4-at.% Tm: Sc2SiO5 (Tm:SSO) crystal is successfully obtained by the Czochralski method. The optical properties and thermal conductivity of the crystal are investigated. The broad continuous wave (CW) laser output of (100)-cut Tm: SSO with the dimensions of 3 mm x 3 mm x 3 mm under laser diode (LD)-pumping is realized. The full width at half maximum (FWHM) of the laser emitting reaches up to 21 nm. The laser threshold of Tm: SSO is measured to be 0.43 W. Efficient diode-pumped CW laser performance of Tm: SSO is demonstrated with a slope efficiency of 25.9% and maximum output power of 934 mW.

引用

页数：4

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