Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O-vapor annealing probed using point-contact devices

被引：18

作者：

Kamiya, T

Durrani, ZAK

Ahmed, H

Sameshima, T

Furuta, Y

Mizuta, H

Lloyd, N

机构：

[1] Univ Cambridge, Hitachi Cambridge Lab, Microelect Res Ctr, Cambridge CB3 0HE, England

[2] Tokyo Univ Agr & Technol, Dept Elect & Elect Engn, Tokyo 1848588, Japan

[3] Univ Southampton, Dept Elect & Comp Sci, Ctr Microelect, Southampton SO17 1BJ, Hants, England

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 03期

关键词：

D O I：

10.1116/1.1570849

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of hot H2O-vapor annealing were investigated on local carrier transport properties over a few grain boundaries in polycrystalline silicon. It shows that hot H2O-vapor annealing effectively reduces grain-boundary dangling bonds and the potential barrier height. In addition, it narrows the distribution of the barrier height value significantly. These effects are thought to originate from oxidation in the vicinity of the film surface, and from hydrogenation in the deeper region. Our results suggest that H2O annealing can improve the carrier transport properties by opening up shorter percolation paths and by increasing the effective carrier mobility and density. (C) 2003 American Vacuum Society.

引用

页码：1000 / 1003

页数：4

共 19 条

[1] ELECTRICAL CONDUCTIVITY IN DISORDERED SYSTEMS [J].

ADLER, D ;

FLORA, LP ;

SENTURIA, SD .

SOLID STATE COMMUNICATIONS, 1973, 12 (01) :9-12

[2] Characterization of tunnel barriers in polycrystalline silicon point-contact single-electron transistors [J].

Furuta, Y ;

Mizuta, H ;

Nakazato, K ;

Kamiya, T ;

Tan, YT ;

Durrani, ZAK ;

Taniguchi, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (4B) :2675-2678

[3] Carrier transport across a few grain boundaries in highly doped polycrystalline silicon [J].

Furuta, Y ;

Mizuta, H ;

Nakazato, K ;

Yong, TT ;

Kamiya, T ;

Durrani, ZAK ;

Ahmed, H ;

Taniguchi, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (6B) :L615-L617

[4]

Kamins T., 1998, Polycrystalline Silicon for Integrated Circuits and Displays

[5] Modification of the tunneling barrier in a nanocrystalline silicon single-electron transistor [J].

Kamiya, T ;

Tan, YT ;

Durrani, ZAK ;

Ahmed, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 299 :405-410

[6] Control of grain-boundary tunneling barriers in polycrystalline silicon [J].

Kamiya, T ;

Durrani, ZAK ;

Ahmed, H .

APPLIED PHYSICS LETTERS, 2002, 81 (13) :2388-2390

[7] Improvement of transport properties for polycrystalline silicon prepared by plasma-enhanced chemical vapor deposition [J].

Kamiya, T ;

Suemasu, A ;

Watanabe, T ;

Sameshima, T ;

Shimizu, I .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2001, 73 (02) :151-159

[8]

KAMIYA T, 2001, MAT RES SOC S P, V664

[9] Device simulation of carrier transport through grain boundaries in lightly doped polysilicon films and dependence on dopant density [J].

Kimura, M ;

Inoue, S ;

Shimoda, T ;

Sameshima, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (9A) :5237-5243

[10] INSITU CHEMICALLY CLEANING POLY-SI GROWTH AT LOW-TEMPERATURE [J].

NAGAHARA, T ;

FUJIMOTO, K ;

KOHNO, N ;

KASHIWAGI, Y ;

KAKINOKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12B) :4555-4558

← 1 2 →