Switching Magnetic Anisotropy of SrRuO3 by Capping-Layer-Induced Octahedral Distortion

被引：15
作者：
Lin, Shan [1 ,2 ,3 ]
Zhang, Qinghua [1 ,2 ]
Roldan, Manuel A. [4 ]
Das, Sujit [5 ]
Charlton, Timothy [6 ]
Fitzsimmons, Michael R. [6 ,7 ]
Jin, Qiao [1 ,2 ,3 ]
Li, Sisi [8 ,9 ]
Wu, Zhenping [8 ,9 ]
Chen, Shuang [10 ]
Guo, Haizhong [10 ]
Tong, Xin [11 ]
He, Meng [1 ,2 ]
Ge, Chen [1 ,2 ]
Wang, Can [1 ,2 ,3 ,12 ]
Gu, Lin [1 ,2 ,3 ,12 ]
Jin, Kui-juan [1 ,2 ,3 ,12 ]
Guo, Er-Jia [1 ,2 ,3 ,12 ]
机构：
[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[4] Arizona State Univ, Eyring Mat Ctr, Tempe, AZ 85287 USA
[5] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[6] Oak Ridge Natl Lab, Neutron Scattering Div, Oak Ridge, TN 37831 USA
[7] Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37996 USA
[8] Beijing Univ Posts & Telecommun, Sch Sci, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
[9] Beijing Univ Posts & Telecommun, Sch Sci, Lab Optoelect Mat & Devices, Beijing 100876, Peoples R China
[10] Zhengzhou Univ, Sch Phys Engn, Zhengzhou 450001, Peoples R China
[11] Chinese Acad Sci, Inst High Energy Phys, China Spallat Neutron Source, Beijing 10049, Peoples R China
[12] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
来源：
PHYSICAL REVIEW APPLIED | 2020年 / 13卷 / 03期
基金：
国家重点研发计划; 中国国家自然科学基金;
关键词：
ELECTRONIC-STRUCTURE; THIN-FILMS; MAGNETORESISTANCE; PHASES;
D O I：
10.1103/PhysRevApplied.13.034033
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Materials with large perpendicular magnetic anisotropy (PMA) are candidates for spintronic devices, such as magnetic random-access memory, etc., due to their stable magnetic reference states. Because of shape anisotropy, the magnetic easy axis of oxide thin films favors in-plane orientation. In this Paper, we demonstrate a convenient means to control the magnetic anisotropy of SrRuO3 (SRO) ultrathin layers from in-plane to out-of-plane by capping with nonmagnetic materials. Tuning the anisotropy is achieved by imposition of symmetry mismatch at the interface-induced structural transition of SRO with suppressed octahedral tilt. These results suggest a potential direction for engineering magnetic oxide thin films with flexible tunable PMA using capping-layer-induced dissimilar symmetry.
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页数：9
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