Experimental Staggered-Source and N plus Pocket-Doped Channel III-V Tunnel Field-Effect Transistors and Their Scalabilities

被引：86

作者：

Mohata, Dheeraj ^{[1
]}

Mookerjea, Saurabh ^{[1
]}

Agrawal, Ashish ^{[1
]}

Li, Yuanyuan ^{[1
]}

Mayer, Theresa ^{[1
]}

Narayanan, Vijaykrishnan ^{[2
]}

Liu, Amy ^{[3
]}

Loubychev, Dmitri ^{[3
]}

Fastenau, Joel ^{[3
]}

Datta, Suman ^{[1
]}

机构：

[1] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Comp Sci & Engn, University Pk, PA 16802 USA

[3] IQE Inc, Bethlehem, PA 18015 USA

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 02期

关键词：

D O I：

10.1143/APEX.4.024105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we experimentally demonstrate 100% enhancement in drive current (I-ON) over In0.53Ga0.47As n-channel homojunction tunnel field-effect transistor (TFET) by replacing In0.53Ga0.47As source with a moderately staggered and lattice-matched GaAs0.5Sb0.5. The enhancement is also compared with In0.53Ga0.47As N+ pocket (delta)-doped channel homojunction TFET. Utilizing calibrated numerical simulations, we extract the effective scaling length (lambda(eff)) for the double gate, thin-body configuration of the staggered heterojunction and delta-doped channel TFETs. The extracted lambda(eff) is shown to be lower than the geometrical scaling length, particularly in the highly staggered-source heterojunction TFET due to the reduced channel side component of the tunnel junction width, resulting in improved device scalability. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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