Phase diagram of thin-film relaxor PbMg1/3Nb2/3O3 -: art. no. 114107

被引:11
作者
Tyunina, M
Levoska, J
机构
[1] Univ Oulu, Microelect Lab, FI-90014 Oulu, Finland
[2] Univ Oulu, Phys Mat Lab, FI-90014 Oulu, Finland
[3] Univ Oulu, Infotech Oulu, Elect Mat Packaging & Reliabil Tech Res Grp, FI-90014 Oulu, Finland
[4] Univ Latvia, Inst Solid State Phys, Ctr Excellence, CAMART, LV-1063 Riga, Latvia
关键词
D O I
10.1063/1.1924874
中图分类号
O59 [应用物理学];
学科分类号
摘要
Epitaxial heterostructures of pure perovskite relaxor ferroelectric PbMg1/3Nb2/3O3 thin films were grown by pulsed laser ablation varying the temperature of deposition. Dielectric response of the films was studied as a function of frequency, temperature, amplitude of ac electric field, and magnitude of dc electric field. The temperatures of dielectric maxima and the freezing temperatures determined in different regimes were analyzed with respect to the microstructure of the films. Different nonmonotonic tendencies in the behavior of the characteristic temperatures were found. The shift of the electric-field-temperature phase diagram of PbMg1/3Nb2/3O3 involving the sequence of transformations between paraelectriclike, glasslike, and ferroelectriclike states was suggested to be responsible for this. The shift of the phase diagram was found to be a monotonic function of the in-plane strain and it was ascribed to the internal electric field. (C) 2005 American Institute of Physics.
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页数:7
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