Dopant Segregation and Heat Treatment Effects on the Electrical Properties of Polycrystalline Silicon thin Films

被引：8

作者：

Zaidi, B. ^{[1
]}

Hadjoudja, B. ^{[1
]}

Shekhar, C. ^{[2
]}

Chouial, B. ^{[1
]}

Li, R. ^{[3
]}

Rao, M. V. Madhava ^{[4
]}

Gagui, S. ^{[1
]}

Chibani, A. ^{[1
]}

机构：

[1] Univ Badji Mokhtar, Fac Sci, Lab Semicond, Dept Phys, BP 12, Annaba 23000, Algeria

[2] Amity Univ, Dept Appl Phys, Gurgaon 122413, India

[3] Louisiana State Univ, Dept Chem Engn, Baton Rouge, LA 70803 USA

[4] Osmania Univ, Dept Phys, Hyderabad, Telangana, India

来源：

SILICON | 2016年 / 8卷 / 04期

关键词：

Polycrystalline silicon; Segregation; Thin films; Annealing; Grain boundaries; POLYSILICON; TRANSISTORS; PHOSPHORUS; LASER;

D O I：

10.1007/s12633-015-9359-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This paper reports the effect of heat treatment on the electronic activity of grain boundaries of polycrystalline silicon. The results obtained show that for the same concentration of doping, the arsenic doped films are more resistive and have less free carriers than boron doped films. The arsenic atoms have a greater tendency to segregate at the grain boundaries than boron atoms. We also noticed that the heat treatment before implantation reduces the number of trap carriers and the quantity of doping atoms at the grain boundaries. For low doping, the concentration of the free charge carriers improves after the heat treatment by 100 % and 23 % for arsenic and boron doping respectively.

引用

页码：513 / 516

页数：4

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