Resistance switching properties of In2O3 nanocrystals memory device with organic and inorganic hybrid structure

被引：8

作者：

Lee, Dong Uk ^{[1
,2
]}

Kim, Eun Kyu ^{[1
,2
]}

Cho, Won-Ju ^{[3
]}

Kim, Young-Ho ^{[4
]}

机构：

[1] Hanyang Univ, Quantum Funct Res Lab, Seoul 133791, South Korea

[2] Hanyang Univ, Dept Phys, Seoul 133791, South Korea

[3] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 139701, South Korea

[4] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2011年 / 102卷 / 04期

关键词：

FILMS;

D O I：

10.1007/s00339-011-6275-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A memory device with In2O3 nanocrystals embedded in a biphenyl-tertracarboxylic dianhydride-phenylen diamine (BPDA-PDA) polyimide layer on a ZnO layer was fabricated, and its electrical properties were evaluated. Then, the transmittance efficiency in the structure of the BPDA-PDA polyimide/In2O3 nanocrystals/ZnO/ITO/double polishing sapphire substrate was measured to be about 80% between 440 to 800 nm by ultraviolet-visible transmittance spectroscopy. A bipolar switching current bistability by difference resistance appeared in the sweep voltage rage from -7 to 7 V. It was considered that the bipolar behavior of current-voltage may originate from a resistance fluctuation because of the electron charging effect in In2O3 nanocrystals by voltage sweeping, Fowler-Nordheim tunneling, space-charge-limited current, and the migration of O2- ions.

引用

页码：933 / 938

页数：6

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