Resistance switching properties of In2O3 nanocrystals memory device with organic and inorganic hybrid structure

被引：8
|
作者：
Lee, Dong Uk [1 ,2 ]
Kim, Eun Kyu [1 ,2 ]
Cho, Won-Ju [3 ]
Kim, Young-Ho [4 ]
机构：
[1] Hanyang Univ, Quantum Funct Res Lab, Seoul 133791, South Korea
[2] Hanyang Univ, Dept Phys, Seoul 133791, South Korea
[3] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 139701, South Korea
[4] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2011年 / 102卷 / 04期
关键词：
FILMS;
D O I：
10.1007/s00339-011-6275-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A memory device with In2O3 nanocrystals embedded in a biphenyl-tertracarboxylic dianhydride-phenylen diamine (BPDA-PDA) polyimide layer on a ZnO layer was fabricated, and its electrical properties were evaluated. Then, the transmittance efficiency in the structure of the BPDA-PDA polyimide/In2O3 nanocrystals/ZnO/ITO/double polishing sapphire substrate was measured to be about 80% between 440 to 800 nm by ultraviolet-visible transmittance spectroscopy. A bipolar switching current bistability by difference resistance appeared in the sweep voltage rage from -7 to 7 V. It was considered that the bipolar behavior of current-voltage may originate from a resistance fluctuation because of the electron charging effect in In2O3 nanocrystals by voltage sweeping, Fowler-Nordheim tunneling, space-charge-limited current, and the migration of O2- ions.
引用
收藏
页码：933 / 938
页数：6
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