Properties of La and Nb-modified PZT thin films grown by radio frequency assisted pulsed laser deposition

被引:7
作者
Verardi, P
Craciun, F
Dinescu, M
Scarisoreanu, N
Moldovan, A
Purice, A
Galassi, C
机构
[1] NILPRP, RO-76900 Bucharest, Romania
[2] CNR, Ist Acust, I-00133 Rome, Italy
[3] CNR, Ist Sistemi Complessi, I-00133 Rome, Italy
[4] CNR, ISTEC, I-48018 Faenza, Italy
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2005年 / 118卷 / 1-3期
关键词
PLZT; PZT; dielectric properties; films;
D O I
10.1016/j.mseb.2004.12.067
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Lead zirconate titanate ferroelectric thin films added with La and Nb has been grown by radio frequency assisted pulsed laser deposition on Pt/Si, starting from sintered targets. The dielectric properties were measured in a large frequency range and their dependence on the a.c. driving field amplitude has been investigated. A linear decreasing of the dielectric permittivity with frequency logarithm increasing has been evidenced. The most important factor for the driving field amplitude influence on the dielectric properties is the type of vacancies introduced by La and Nb substitutions, which indicates that the dynamics involved in a.c. field behavior is controlled by interaction mechanisms between ferroelectric domain or nanodomain walls and pinning (vacancies) centers. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:39 / 43
页数:5
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