Electrostatics Explains the Position-Dependent Effect of GU Wobble Base Pairs on the Affinity of RNA Kissing Complexes

被引:2
|
作者
Abi-Ghanem, Josephine [1 ]
Rabin, Clemence [1 ]
Porrini, Massimiliano [1 ]
Dausse, Eric [2 ]
Toulme, Jean-Jacques [2 ]
Gabelica, Valerie [1 ]
机构
[1] IECB, Lab Acides Nucl Regulat Nat & Artificielle, UMR5320, ARNA,U1212, 2 Rue Robert Escarpit, F-33607 Pessac, France
[2] Univ Bordeaux, Lab Acides Nucl Regulat Nat & Artificielle, INSERM, CNRS,ARNA,U1212,UMR5320, 146 Rue Leo Saignat, F-33076 Bordeaux, France
基金
欧洲研究理事会;
关键词
aptamers; mass spectrometry; molecular modeling; RNA structures; structure-activity relationships; CENTER-DOT-U; MOLECULAR-DYNAMICS SIMULATIONS; LOOP-LOOP COMPLEXES; METAL-ION BINDING; POTENTIAL FUNCTIONS; CONTINUUM SOLVENT; APTAMER SELECTION; LIQUID WATER; STABILITY; DNA;
D O I
10.1002/cphc.201700337
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In the RNA realm, non-Watson-Crick base pairs are abundant and can affect both the RNA 3D structure and its function. Here, we investigated the formation of RNA kissing complexes in which the loop-loop interaction is modulated by non-Watson-Crick pairs. Mass spectrometry, surface plasmon resonance, and UV-melting experiments show that the GU wobble base pair favors kissing complex formation only when placed at specific positions. We tried to rationalize this effect by molecular modeling, including molecular mechanics Poisson-Boltzmann surface area (MMPBSA) thermodynamics calculations and PBSA calculations of the electrostatic potential surfaces. Modeling reveals that the GU stabilization is due to a specific electrostatic environment defined by the base pairs of the entire loop-loop region. The loop is not symmetric, and therefore the identity and position of each base pair matters. Predicting and visualizing the electrostatic environment created by a given sequence can help to design specific kissing complexes with high affinity, for potential therapeutic, nanotechnology or analytical applications.
引用
收藏
页码:2782 / 2790
页数:9
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