Double GaAs/Si Heterojunction Layers in Si Solar Cells Fabricated by Electron Beam Evaporation

被引:2
作者
Palei, Srikanta [1 ,2 ]
Parida, Bhaskar [3 ]
Sahu, Rajkumar [1 ,2 ]
Mun, Jonghun [1 ,2 ]
Kim, Keunjoo [1 ,2 ]
机构
[1] Chonbuk Natl Univ, Dept Mech Engn, Jeonju 54896, South Korea
[2] Chonbuk Natl Univ, Res Ctr Ind Technol, Jeonju 54896, South Korea
[3] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Semicond Phys Res Ctr, Jeonju 54896, South Korea
基金
新加坡国家研究基金会;
关键词
Double Hetero-Junction; GaAs; ppnn; E-Beam Evaporation; Nanodots; INTERFACE; SUBSTRATE; FILMS;
D O I
10.1166/jnn.2019.16229
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We investigated silicon solar cells with double gallium arsenide heterojunctions. Both p-type and n-type GaAs were deposited on the back and front side of the Si pn junction using an electron beam evaporator under a high vacuum condition to fabricate ppnn cells, respectively. The ppnn cell with a micro-textured Si surface showed enhanced quantum efficiency by about 10% in the shorter wavelength region and by about 1% in the longer wavelength region compared to ppnn cell with nanotextured Si surface. Moreover, the average minority carrier lifetime was increased by 1 mu s and conversion efficiency was increased by 0.74% for the micro-ppnn cell despite its high series resistance. Morphological analysis showed that GaAs thin-film on Si surface was As-rich in the as-deposition case. It became distorted at higher annealing temperatures, leading to formation of cracks. Moreover, annealing of the deposited GaAs on a nano-textured Si surface at 100 degrees C for 30 min resulted in formation of GaAs nanodots in an amorphous GaAs matrix.
引用
收藏
页码:1368 / 1375
页数:8
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