Simulation of ultrasubmicrometer-gate In0.52Al0.48As/In0.75Ga0.25As/In0.52Al0.48As/InP pseudomorphic HEMTs using a full-band Monte Carlo simulator

被引：26

作者：

Ayubi-Moak, Jason S. ^{[1
]}

Ferry, David K.

Goodnick, Stephen M.

Akis, Richard

Saraniti, Marco

机构：

[1] Arizona State Univ, Ira A Fulton Sch Engn, Dept Elect Engn, Tempe, AZ 85287 USA

[2] Arizona State Univ, Ira A Fulton Sch Engn, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 09期

关键词：

millimeter-wave transistors; Monte Carlo methods; pseudomorphic high-electron mobility transistors (p-HEMTs);

D O I：

10.1109/TED.2007.902902

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pseudomorphic delta-doped ultrasubmicrometer-gate high-electron mobility transistors have been modeled using a full-band cellular Monte Carlo simulator. Reasonable agreement between experimental and numerical results is obtained for a 70-nm gate length. We discuss the scaling of this device to shorter gate lengths and the role played by various dimensions in the structure. Devices with 20-nm gate lengths should produce f(T)s above 1.5 THz without difficulty. This paper demonstrates the power of particle-based simulation tools in capturing the relevant physics responsible for device operation and key to performance optimization.

引用

页码：2327 / 2338

页数：12

共 53 条

[1]

[Anonymous], 1985, MULTIGRID METHODS AP

[2] On the effects of gate-recess etching in current-collapse of different cap layers grown AlGaN/GaN high-electron-mobility transistors [J].

Arulkumaran, S ;

Egawa, T ;

Selvaraj, L ;

Ishikawa, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (8-11) :L220-L223

[3] VELOCITY OVERSHOOT IN ULTRA-SHORT-GATE-LENGTH GAAS-MESFETS [J].

BERNSTEIN, G ;

FERRY, DK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) :887-892

[4] LATTICE-DYNAMICS OF INDIUM PNICTIDES [J].

BORCHERDS, PH ;

KUNC, K .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (20) :4145-4155

[5]

BRANLARD J, 2005, P NONEQ CARR DYN SEM, P359

[6] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[7] CORRECTION [J].

CHELIKOWSKY, JR .

PHYSICAL REVIEW B, 1984, 30 (08) :4828-4828

[8] High performance InP high electron mobility transistors by valved phosphorus cracker [J].

Chin, TP ;

Chen, YC ;

Barsky, M ;

Wojtowicz, M ;

Grundbacher, R ;

Lai, R ;

Streit, DC ;

Block, TR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1642-1644

[9]

Daembkes H., 1991, MODULATION DOPED FIE

[10] Beyond G-Band: A 235 GHz InP MMIC amplifier [J].

Dawson, D ;

Samoska, L ;

Fung, AK ;

Lee, K ;

Lai, R ;

Grundbacher, R ;

Liu, PH ;

Raja, R .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2005, 15 (12) :874-876

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