Fabrication and characterization of a nanostructured TiO2/In2S3-Sb2S3/CuSCN extremely thin absorber (eta) solar cell

被引：22

作者：

Huerta-Flores, Ali M. ^{[1
]}

Garcia-Gomez, Nora A. ^{[1
]}

de la Parra-Arciniega, Salome M. ^{[1
]}

Sanchez, Eduardo M. ^{[1
]}

机构：

[1] UANL, Fac Ciencias Quim, Almacenamiento & Convers Energia LabMat2, Av Univ S-N Ciudad Univ, San Nicolas De Los Garza 66455, Nuevo Leon, Mexico

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2016年 / 31卷 / 08期

关键词：

extremely thin absorber solar cell; In2S3; Sb2S3; silar; PHOTOVOLTAIC CELL; TITANIUM-DIOXIDE; TIO2; SULFIDE; FILMS; EFFICIENCY;

D O I：

10.1088/0268-1242/31/8/085011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we report the successful assembly and characterization of a TiO2/In2S3-Sb2S3/CuSCN extremely thin absorber solar cell. Nanostructured TiO2 deposited by screen printing on an ITO substrate was used as an n-type electrode. An similar to 80 nm extremely thin layer of the system In2S3-Sb2S3 deposited by successive ionic layer adsorption and a reaction (silar) method was used as an absorber. The voids were filled with p-type CuSCN and the entire assembly was completed with a gold contact. The solar cell fabricated with this heterostructure showed an energy conversion efficiency of 4.9%, which is a promising result in the development of low cost and simple fabrication of solar cells.

引用

页数：10

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