Light-intensity dependence of photocreated defects in hydrogenated amorphous silicon-nitrogen alloy films

The photocreation of neutral dangling bonds in hydrogenated amorphous silicon obeys a relation of G(2/3)t(1/3), where G is the carrier generation rate and t the illumination time. It is found in the present work that the G-dependence becomes prominently weak with an increase in the nitrogen content for hydrogenated amorphous silicon-nitrogen alloy films without an appreciable change in the t-dependence. No model of the photocreation of dangling bonds available to date can predict such a behavior.