Photovoltaic cell characteristics for high-intensity laser light

被引：14
|
作者：
Miyakawa, H [1 ]
Tanaka, Y [1 ]
Kurokawa, T [1 ]
机构：
[1] Tokyo Univ Agr & Technol, Grad Sch Elect & Informat Technol, Koganei, Tokyo 1848588, Japan
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2005年 / 86卷 / 02期
关键词：
optical power transmission; photovoltaic cell; uni-traveling-carrier photodiode; series resistance; recombination;
D O I：
10.1016/j.solmat.2004.06.009
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The series resistance value of a photovoltaic (PV) cell required for high-intensity light and the effects of both the alpha parameter (the ratio of the open-circuit voltage to the bandgap) and temperature on conversion efficiency are investigated by a calculation method derived from the fundamental characteristics of PV cell. The PV cell characteristics for high-intensity laser light, including Si, GaAs, InGaAs PV cells and InGaAs uni-traveling-carrier photodiode (UTC-PD), are experimentally investigated. The small series resistance as large as 20-30 muOmega cm(2) and the suppression of recombination are important for obtaining higher conversion efficiency, especially for high-intensity laser light. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：253 / 267
页数：15
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