Primary thermometry of a single reservoir using cyclic electron tunneling to a quantum dot

被引:28
作者
Ahmed, Imtiaz [1 ]
Chatterjee, Anasua [2 ,3 ]
Barraud, Sylvain [4 ]
Morton, John J. L. [2 ,5 ]
Haigh, James A. [6 ]
Gonzalez-Zalba, M. Fernando [6 ]
机构
[1] Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England
[2] UCL, London Ctr Nanotechnol, London WC1H 0AH, England
[3] Univ Copenhagen, Ctr Quantum Devices, Niels Bohr Inst, DK-2100 Copenhagen, Denmark
[4] CEA Grenoble, CEA LETI MINATEC, F-38000 Grenoble, France
[5] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England
[6] Hitachi Cambridge Lab, JJ Thomson Ave, Cambridge CB3 0HE, England
基金
英国工程与自然科学研究理事会; 欧盟地平线“2020”;
关键词
COULOMB-BLOCKADE; OSCILLATIONS; TRANSPORT; NOISE;
D O I
10.1038/s42005-018-0066-8
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
At the nanoscale, local and accurate measurements of temperature are of particular relevance when testing quantum thermodynamical concepts or investigating novel thermal nanoelectronic devices. Here, we present a primary electron thermometer that allows probing the local temperature of a single-electron reservoir in single-electron devices. The thermometer is based on cyclic electron tunneling between a system with discrete energy levels and the reservoir. When driven at a finite rate, close to a charge degeneracy point, the system behaves like a variable capacitor whose full width at half maximum depends linearly with temperature. We demonstrate this type of thermometer using a quantum dot in a silicon nanowire transistor. We drive cyclic electron tunneling by embedding the device in a radio-frequency resonator which in turn allows reading the thermometer dispersively. Overall, the thermometer shows potential for local probing of fast heat dynamics in nanoelectronic devices and for seamless integration with silicon-based quantum circuits.
引用
收藏
页数:7
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