Electrical conductivity of Cux(As0.4Se0.3Te0.3)100-x glasses

被引:3
|
作者
Giridhar, A [1 ]
Mahadevan, S [1 ]
机构
[1] Natl Aeronaut Lab, Div Mat Sci, Bangalore 560017, Karnataka, India
关键词
D O I
10.1023/A:1004537828979
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Results of the de electrical conductivity (sigma) measurements (from 90 to 420 Kj on 15 com positions of the Cu-x(As(0.4)Se(0.3)Teo(0.3))(100-x) glasses (x from 0 to 30) are presented. Similar to that observed [1] in the composition dependencies of the mean atomic volume (V) and the glass transition temperature (T-g) of these glasses, it is possible to delineate three regions in the composition dependence of the sigma of these glasses. (i) For addition of Cu up to 1 at %, the sigma register a decrease compared to that of the parent Aso(0.4)Seo(0.3)Teo(0.3) glass. (ii) For Cu > 1 at %, the conduction activation energy (Delta E) and the pre-exponential factor (C) decrease, with a concomitant increase in a (at 250 K) by about six orders of magnitude. (iii) Both Delta E and C show saturation for Cu > 23 at %. The a-composition data are examined using the model developed earlier [1] to understand, the V land T-g)-composition dependencies of these glasses. (C) 1999 Kluwer Academic Publishers.
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页码:1281 / 1285
页数:5
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