Self-heating effect compensation in HBTs and its analysis and simulation

被引：21

作者：

Zhu, Y ^{[1
]}

Twynam, JK ^{[1
]}

Yagura, M ^{[1
]}

Hasegawa, M ^{[1
]}

Hasegawa, T ^{[1
]}

Eguchi, Y ^{[1
]}

Amano, Y ^{[1
]}

Suematsu, E ^{[1
]}

机构：

[1] Sharp Co Ltd, Adv Technol Labs, Nara 632, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 11期

关键词：

feedback; HBT; semiconductor device modeling; semiconductor device thermal factors; temperature;

D O I：

10.1109/16.960390

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple technique, inserting a specified resistance in the bias circuit, to compensate self-heating effect in DC and pulse characteristics of HBTs is proposed and demonstrated. Utilizing the bias scheme dependence of HBT behaviors, the compensation is achieved due to the cancellation of the positive and negative thermal-electric feedback inside HBTs. An analytical expression relating the specified resistance with the physical parameters of HBT is presented. The accurate simulation of both the self-heating effect and its compensation is, for the first time, demonstrated with a modified Gummel-Poon model.

引用

页码：2640 / 2646

页数：7

共 16 条

[1]

ALDERSTEIN MG, 1998, IEEE T ELECTRON DEV, V45, P1653

[2] QUANTITATIVE STUDY OF EMITTER BALLASTING [J].