Plasma nitride hydrogen source encapsulation method to hydrogenate polysilicon thin film transistors

被引：3

作者：

Lam, LK ^{[1
]}

Chen, DL ^{[1
]}

Ast, DG ^{[1
]}

机构：

[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 1999年 / 2卷 / 03期

关键词：

D O I：

10.1149/1.1390762

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A novel, commercially attractive process has been developed to hydrogenate polysilicon thin film transistors (poly-Si TFTs). Active device regions of TFTs are encapsulated by two nitride layers; one underneath the poly-Si channel but separated by a thin oxide, and the other capping the device. During the dopant activation anneal, hydrogen is driven from nitride layers, through intermediate oxide layers, and into the channel passivating trap sites. On test samples, secondary ion mass spectroscopy suggests this treatment introduced up to 10(20) cm(-3) hydrogen into poly-Si. After hydrogenation, the threshold was reduced by 43 V and the saturation on-current improved by two magnitudes, approaching the performance of electron cyclotron resonance hydrogenated TFTs. (C) 1999 The Electrochemical Society. S1099-0062(98)07-085-0. All rights reserved.

引用

页码：140 / 142

页数：3

共 13 条

[1] HYDROGEN PASSIVATION OF POLYSILICON THIN-FILM TRANSISTORS BY ELECTRON-CYCLOTRON-RESONANCE PLASMA [J].

BAERT, K ;

MURAI, H ;

KOBAYASHI, K ;

NAMIZAKI, H ;

NUNOSHITA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (6A) :2601-2606

[2] HYDROGENATION OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS BY PLASMA ION-IMPLANTATION [J].

BERNSTEIN, DJ ;

QIN, S ;

CHAN, C ;

KING, TJ .

IEEE ELECTRON DEVICE LETTERS, 1995, 16 (10) :421-423

[3] EXAMINATION OF THE OPTIMIZATION OF THIN-FILM TRANSISTOR PASSIVATION WITH HYDROGEN ELECTRON-CYCLOTRON RESONANCE PLASMAS [J].

DITIZIO, RA ;

FONASH, SJ ;

HSEIH, BC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1992, 10 (01) :59-65

[4] Structural properties of a-Si1-xNx:H films grown by plasma enhanced chemical vapour deposition by SiH4+NH3+H2 gas mixtures [J].

Giorgis, F ;

Pirri, CF ;

Tresso, E .

THIN SOLID FILMS, 1997, 307 (1-2) :298-305

[5]

HA YM, 1994, MATER RES SOC S P, V345, P145

[6] HYDROGEN DIFFUSION IN POLYCRYSTALLINE SILICON THIN-FILMS [J].

JACKSON, WB ;

JOHNSON, NM ;

TSAI, CC ;

WU, IW ;

CHIANG, A ;

SMITH, D .

APPLIED PHYSICS LETTERS, 1992, 61 (14) :1670-1672

[7] HYDROGENATION OF TRANSISTORS FABRICATED IN POLYCRYSTALLINE-SILICON FILMS [J].

KAMINS, TI ;

MARCOUX .

ELECTRON DEVICE LETTERS, 1980, 1 (08) :159-161

[8] CONDUCTIVITY BEHAVIOR IN POLYCRYSTALLINE SEMICONDUCTOR THIN-FILM TRANSISTORS [J].

LEVINSON, J ;

SHEPHERD, FR ;

SCANLON, PJ ;

WESTWOOD, WD ;

ESTE, G ;

RIDER, M .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1193-1202

[9] MECHANISM OF PLASMA HYDROGENATION OF POLYSILICON THIN-FILM TRANSISTORS [J].

MITRA, U ;

ROSSI, B ;

KHAN, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (11) :3420-3424

[10] HYDROGEN PASSIVATION OF POLYSILICON MOSFETS FROM A PLASMA NITRIDE SOURCE [J].

POLLACK, GP ;

RICHARDSON, WF ;

MALHI, SDS ;

BONIFIELD, T ;

SHICHIJO, H ;

BANERJEE, S ;

ELAHY, M ;

SHAH, AH ;

WOMACK, R ;

CHATTERJEE, PK .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) :468-470

← 1 2 →