Lateral profiling of interface traps and oxide charge in MOSFET devices:: Charge pumping versus DCIV

被引：11

作者：

Melik-Martirosian, A ^{[1
]}

Ma, TP ^{[1
]}

机构：

[1] Yale Univ, Ctr Microelect Mat & Struct, New Haven, CT 06520 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 10期

关键词：

charge-pumping; DCIV technique; flash memory; interface-trap density; MOS; oxide-charge density;

D O I：

10.1109/16.954469

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An improved oxide-charge and interface-trap lateral profiling charge pumping technique (iLPCP) is described. Erase-induced oxide charge and interface traps are investigated in Flash EPROM devices. It is shown that the improved technique allows the extraction of profiles in cases where the previous method does not yield satisfactory results. A comparative study of iLPCP and of an existing direct current (DCIV) technique for lateral profiling of interface traps is conducted: both erase- and program-induced interface traps are investigated in Flash EPROM devices. The results indicate that 1) iLPCP probes a much bigger portion of the gate region; 2) iLPCP probes a wider energy range; 3) DCIV is more sensitive deep in the channel and thus complements iLPCP.

引用

页码：2303 / 2309

页数：7

共 12 条

[1]

Chen C, 1998, IEEE T ELECTRON DEV, V45, P512, DOI 10.1109/16.658688

[2] Extraction of metal-oxide-semiconductor field-effect-transistor interface state and trapped charge spatial distributions using a physics-based algorithm [J].

Chim, WK ;

Leang, SE ;

Chan, DSH .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (04) :1992-2001

[3] A new charge-pumping technique for profiling the interface-states and oxide-trapped charges in MOSFET's [J].

Chu, YL ;

Lin, DW ;

Wu, CY .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (02) :348-353

[4] BORDER TRAPS IN MOS DEVICES [J].

FLEETWOOD, DM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (02) :269-271

[5] AN INVESTIGATION OF ERASE-MODE DEPENDENT HOLE TRAPPING IN FLASH EEPROM MEMORY CELL [J].

HADDAD, S ;

CHI, C ;

WANG, A ;

BUSTILLO, J ;

LIEN, J ;

MONTALVO, T ;

VANBUSKIRK, M .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (11) :514-516

[6] INTERFACE TRAP GENERATION IN SILICON DIOXIDE WHEN ELECTRONS ARE CAPTURED BY TRAPPED HOLES [J].

LAI, SK .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2540-2546

[7] A new "multifrequency" charge pumping technique to profile hot-carrier-induced interface-state density in nMOSFET's [J].

Mahapatra, S ;

Parikh, CD ;

Vasi, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (05) :960-967

[8] DIRECT-CURRENT MEASUREMENTS OF OXIDE AND INTERFACE TRAPS ON OXIDIZED SILICON [J].

NEUGROSCHEL, A ;

SAH, CT ;

HAN, KM ;

CARROLL, MS ;

NISHIDA, T ;

KAVALIEROS, JT ;

LU, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (09) :1657-1662

[9]

Ong T., 1993, P S VLSI TECHN, P83

[10] Profiling interface traps in MOS transistors by the DC current-voltage method [J].

Sah, CT ;

Neugroschel, A ;

Han, KM ;

Kavalieros, JT .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (02) :72-74

← 1 2 →