High-performance compound-semiconductor integrated circuits for advanced digital coherent optical communications systems

被引：2

作者：

Nagatani, Munehiko ^{[1
,2
]}

Nosaka, Hideyuki ^{[1
,2
]}

机构：

[1] NTT Corp, NTT Device Technol Labs, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430198, Japan

[2] NTT Corp, NTT Network Innovat Labs, 1-1 Hikari No Oka, Yokosuka, Kanagawa 2390847, Japan

来源：

IEICE ELECTRONICS EXPRESS | 2016年 / 13卷 / 18期

关键词：

compound-semiconductor IC; optical communication; digital coherent; ADC; DAC; modulator driver; TIA; InP HBT; FUNDAMENTALS; AMPLIFIER;

D O I：

10.1587/elex.13.20162003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Communications traffic over photonic networks is exponentially increasing due to the spread of broadband applications. To cope with the rapid growth, novel 100-Gb/s digital coherent systems have been deployed recently in optical core networks. Further research and development of digital coherent technologies with channel rates of beyond 100 Gb/s is now being conducted. Optical transceivers for such high-speed communications systems need high-performance analog and mixed-signal electronic circuits such as optical modulator drivers, transimpedance amplifiers (TIAs), analog-to-digital converters (ADCs), and digital-to-analog converters (DACs). Compound-semiconductor integrated circuits (ICs) have played key roles in this technical field. This paper reviews recent trends in compound-semiconductor ICs for such advanced digital coherent optical communications systems and presents our latest results based on InP hetero-junction bipolar transistor (HBT) technology.

引用

页数：20

共 39 条

[1]

Awny A, 2016, ISSCC DIG TECH PAP I, V59, P406, DOI 10.1109/ISSCC.2016.7418079

[2]

Bouvier Y., 2013, P TOP WORKSH HET MIC, P9

[3] 70 GSa/s and 51 GHz bandwidth track-and-hold amplifier in InP DHBT process [J].

Deza, J. ;

Ouslimani, A. ;

Konczykowska, A. ;

Kasbari, A. ;

Godin, J. ;

Pailler, G. .

ELECTRONICS LETTERS, 2013, 49 (06) :388-389

[4]

Dupuy J. Y., 2015, P COMP SEM IC S CSIC, P219, DOI [10.1109/CSICS.2015.7314463, DOI 10.1109/CSICS.2015.7314463]

[5]

Endo D, 2016, IEEE INT SYMP SAFE, P100, DOI 10.1109/SSRR.2016.7784284

[6] Recent progress and prospects of terahertz CMOS [J].

Fujishima, Minoru ;

Amakawa, Shuhei .

IEICE ELECTRONICS EXPRESS, 2015, 12 (13)

[7]

Green D. S., 2014, P CS MANTECH C TAMP, P343

[8]

Greshishchev Y. M., 2011, 2011 IEEE International Solid-State Circuits Conference (ISSCC 2011), P194, DOI 10.1109/ISSCC.2011.5746279

[9]

Horikoshi K., 2016, P OPT COMM C OECC

[10]

Huang H, 2014, IEEE RAD FREQ INTEGR, P65, DOI 10.1109/RFIC.2014.6851659

← 1 2 3 4 →