Carbon concentration, Curie temperature, and magnetic resonance field of Mn5Ge3(C) thin films

被引：3

作者：

Assaf, E. ^{[1
]}

Portavoce, A. ^{[1
]}

Descoins, M. ^{[1
]}

Bertoglio, M. ^{[1
]}

Bertaina, S. ^{[1
]}

机构：

[1] Aix Marseille Univ, IM2NP, CNRS, Fac Sci St Jerome, Case 142, F-13397 Marseille, France

来源：

MATERIALIA | 2019年 / 8卷

关键词：

Mn(5)ge(3); Thin film; Ferromagnetism; Carbon; Doping; FERROMAGNETIC MN5GE3;

D O I：

10.1016/j.mtla.2019.100487

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Carbon-doped Mn5Ge3 thin films were grown using magnetron sputtering and reactive diffusion or non-diffusive reaction (NDR). The C content, the Curie temperature, and the resonance field difference between the hard and easy axis were measured for all the films, allowing linear relations between these three parameters to be quantitatively determined. Thanks to these functions, the measurement of a single of these parameters allows the two others to be known. The association of the sputtering technique to the NDR process appears as the best way for producing C-doped Mn5Ge3 thin films.

引用

页数：4

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