Demonstration of 505 nm laser diodes using wavelength-stable semipolar (20(21)over-bar) InGaN/GaN quantum wells

被引：33

作者：

Huang, Chia-Yen ^{[1
]}

Hardy, Matthew T. ^{[1
]}

Fujito, Kenji ^{[2
]}

Feezell, Daniel F. ^{[1
]}

Speck, James S. ^{[1
]}

DenBaars, Steven P. ^{[1
,3
]}

Nakamura, Shuji ^{[1
,3
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Mitsubishi Chem Corp, Optoelect Lab, Ushi Ku, Ibaraki 3001295, Japan

[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 24期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.3666791

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate GaN-based semipolar (20 (21) over bar) laser diodes (LD) in the green region of the spectrum. 505 nm lasing was observed under pulsed operation, with a threshold current density (J(th)) of 27.5 kA/cm(2) and a threshold voltage (V-th) of 15.5 V. The blueshift of spontaneous emission was less than 5 nm when varying the injection current level from 125 A/cm(2) to threshold. Simulations show that the reduced blueshift can be attributed to the minimal dependence of the energy potential profile in the active region on the applied bias and current injection level. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3666791]

引用

页数：3

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