Magnetization profile at the Fe/GaAs(001)-4 x 6 interface

被引：11

作者：

Giovanelli, L

Tian, CS

Gastelois, PL

Panaccione, G

Fabrizioli, M

Hochstrasser, M

Galaktionov, M

Back, CH

Rossi, G

机构：

[1] TASC, Ist Nazl Fis Mat, INFM, Lab Nazl, I-34012 Trieste, Italy

[2] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China

[3] CNEN, CDTN, BR-30123970 Belo Horizonte, MG, Brazil

[4] Univ Trieste, I-34100 Trieste, Italy

[5] ETH, Festkorperphys Lab, CH-8093 Zurich, Switzerland

[6] St Petersburg Tech State Univ, St Petersburg Div Expt Phys, St Petersburg 195251, Russia

[7] Univ Regensburg, Inst Phys Expt, D-93040 Regensburg, Germany

[8] Univ Modena, INFM, Dipartimento Fis, I-41100 Modena, Italy

来源：

PHYSICA B-CONDENSED MATTER | 2004年 / 345卷 / 1-4期

关键词：

Fe; Co; GaAs; X-ray magnetic circular dichroism; spin injection;

D O I：

10.1016/j.physb.2003.11.048

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The magnetization of a thin Fe film epitaxially grown on GaAs(001)-4 x 6 was studied at different depths from the metal/semiconductor interface using a single layer of Fe0.5Co0.5 as a marker layer through a double-wedge Fe film. By measuring the X-ray magnetic circular dichroism spectroscopy at the L-2.3 of Co, the magnetic response of the film could be sensed at different distances from the interface. Data show a reduction of the magnetization at the interface though the existence of a magnetically "dead" layer is completely ruled out. Moreover, the magnetization was found to be reduced at the Fe film surface. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：177 / 180

页数：4

共 11 条

[1] Onset of ferromagnetism in Fe epitaxially grown on GaAs(001) (4x2) and (2x6)
Bensch, F
Garreau, G
Moosbühler, R
Bayreuther, G
Beaurepaire, E
[J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) : 7133 - 7135
[2] BRIEN WL, 1994, PHYS REV B, V50, P12672
[3] X-RAY CIRCULAR-DICHROISM AND LOCAL MAGNETIC-FIELDS
CARRA, P
THOLE, BT
ALTARELLI, M
WANG, XD
[J]. PHYSICAL REVIEW LETTERS, 1993, 70 (05) : 694 - 697
[4] Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier
Hanbicki, AT
van 't Erve, OMJ
Magno, R
Kioseoglou, G
Li, CH
Jonker, BT
Itskos, G
Mallory, R
Yasar, M
Petrou, A
[J]. APPLIED PHYSICS LETTERS, 2003, 82 (23) : 4092 - 4094
[5] PROPERTIES OF FE SINGLE-CRYSTAL FILMS GROWN ON (100)GAAS BY MOLECULAR-BEAM EPITAXY
KREBS, JJ
JONKER, BT
PRINZ, GA
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) : 2596 - 2599
[6] First-principles calculations of Fe on GaAs(100)
Mirbt, S
Sanyal, B
Isheden, C
Johansson, B
[J]. PHYSICAL REVIEW B, 2003, 67 (15): : 1554211 - 1554219
[7] Electron-yield saturation effects in L-edge x-ray magnetic circular dichroism spectra of Fe, Co, and Ni
Nakajima, R
Stöhr, J
Idzerda, YU
[J]. PHYSICAL REVIEW B, 1999, 59 (09): : 6421 - 6429
[8] Spin-dependent tunneling through a symmetric semiconductor barrier
Perel', VI
Tarasenko, SA
Yassievich, IN
Ganichev, SD
Bel'kov, VV
Prettl, W
[J]. PHYSICAL REVIEW B, 2003, 67 (20)
[9] Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem
Rashba, EI
[J]. PHYSICAL REVIEW B, 2000, 62 (24) : R16267 - R16270
[10] INTERDIFFUSION AND REACTION AT THE FE/GAAS(110) INTERFACE
RUCKMAN, MW
JOYCE, JJ
WEAVER, JH
[J]. PHYSICAL REVIEW B, 1986, 33 (10): : 7029 - 7035

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