Ionic conduction in zirconia films of nanometer thickness

被引：98

作者：

Guo, X ^{[1
]}

Vasco, E

Mi, SB

Szot, K

Wachsman, E

Waser, R

机构：

[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

ACTA MATERIALIA | 2005年 / 53卷 / 19期

关键词：

zirconia; nanostructure; electrical properties; laser deposition;

D O I：

10.1016/j.actamat.2005.07.033

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline 8 mol% Y2O3-stabilized ZrO2 films with thicknesses of 12 and 25 nm were deposited on (100) MgO substrates, their nanostructures were investigated by means of transmission electron microscopy (TEM), high-resolution TEM and atomic force microscopy, and the electrical properties of the nanostructured films were characterized in dry and humid O-2. Compared with microcrystalline bulk ceramics, the ionic conductivity of the nanostructured films is lower by about a factor of 4, which is mainly due to the lower bulk conductivity and the low grain-boundary conductivity. There is not remarkable proton conduction in the nanostructured films when annealed in water vapor, and the influence of the ZrO2/MgO interface on its ionic conduction is negligible. (c) 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：5161 / 5166

页数：6

共 23 条

[1] RUBBERY SOLID ELECTROLYTES WITH DOMINANT CATIONIC TRANSPORT AND HIGH AMBIENT CONDUCTIVITY [J].

ANGELL, CA ;

LIU, C ;

SANCHEZ, E .

NATURE, 1993, 362 (6416) :137-139

[2] Defect thermodynamics and electrical properties of nanocrystalline oxides: Pure and doped CeO2 [J].

Chiang, YM ;

Lavik, EB ;

Blom, DA .

NANOSTRUCTURED MATERIALS, 1997, 9 (1-8) :633-642

[3] Defect and transport properties of nanocrystalline CeO2-x [J].

Chiang, YM ;

Lavik, EB ;

Kosacki, I ;

Tuller, HL ;

Ying, JY .

APPLIED PHYSICS LETTERS, 1996, 69 (02) :185-187

[4] ELECTRICAL PROPERTIES OF SOLID OXIDE ELECTROLYTES [J].

ETSELL, TH ;

FLENGAS, SN .

CHEMICAL REVIEWS, 1970, 70 (03) :339-&

[5] Grain size dependent grain boundary defect structure: case of doped zirconia [J].

Guo, X ;

Zhang, ZL .

ACTA MATERIALIA, 2003, 51 (09) :2539-2547

[6] Enhancement of p-type conductivity, in nanocrystalline BaTiO3 ceramics -: art. no. 082110 [J].

Guo, X ;

Pithan, C ;

Ohly, C ;

Jia, CL ;

Dornseiffer, J ;

Haegel, FH ;

Waser, R .

APPLIED PHYSICS LETTERS, 2005, 86 (08) :1-3

[7] Grain boundary blocking effect in zirconia: A Schottky barrier analysis [J].

Guo, X ;

Maier, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (03) :E121-E126

[8] Space charge concept for acceptor-doped zirconia and ceria and experimental evidences [J].

Guo, X ;

Waser, R .

SOLID STATE IONICS, 2004, 173 (1-4) :63-67

[9] Property degradation of tetragonal zirconia induced by low-temperature defect reaction with water molecules [J].

Guo, X .

CHEMISTRY OF MATERIALS, 2004, 16 (21) :3988-3994

[10] Separation of electronic and ionic contributions to the gain boundary conductivity in acceptor-doped SrTiO3 [J].

Guo, X ;

Fleig, J ;

Maier, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (09) :J50-J53

← 1 2 3 →