Ionic conduction in zirconia films of nanometer thickness

被引:98
作者
Guo, X [1 ]
Vasco, E
Mi, SB
Szot, K
Wachsman, E
Waser, R
机构
[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
关键词
zirconia; nanostructure; electrical properties; laser deposition;
D O I
10.1016/j.actamat.2005.07.033
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Polycrystalline 8 mol% Y2O3-stabilized ZrO2 films with thicknesses of 12 and 25 nm were deposited on (100) MgO substrates, their nanostructures were investigated by means of transmission electron microscopy (TEM), high-resolution TEM and atomic force microscopy, and the electrical properties of the nanostructured films were characterized in dry and humid O-2. Compared with microcrystalline bulk ceramics, the ionic conductivity of the nanostructured films is lower by about a factor of 4, which is mainly due to the lower bulk conductivity and the low grain-boundary conductivity. There is not remarkable proton conduction in the nanostructured films when annealed in water vapor, and the influence of the ZrO2/MgO interface on its ionic conduction is negligible. (c) 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:5161 / 5166
页数:6
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