Frequency Dependent Dielectric Properties of ZnSe/p-Si Diode

被引：0

作者：

Gullu, Hasan Huseyin ^{[1
,2
]}

Yildiz, Dilber Esra ^{[3
]}

机构：

[1] Middle East Tech Univ, Cent Lab, Ankara, Turkey

[2] Middle East Tech Univ, Ctr Solar Energy Res & Applicat GUNAM, Ankara, Turkey

[3] Hitit Univ, Dept Phys, Fac Arts & Sci, Corum, Turkey

来源：

JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI | 2019年 / 22卷 / 01期

关键词：

E-beam evaporation; dielectric properties; frequency effect; AC ELECTRICAL-CONDUCTIVITY; VOLTAGE CHARACTERISTICS; INTERFACE STATES; TEMPERATURE; MODULUS; CAPACITANCE; PARAMETERS;

D O I：

10.2339/politeknik.389636

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The study on electrical and dielectric properties of the ZnSe/p-Si diode have been investigated using admittance measurements in the frequency range of 50 kHz - 1 MHz at room temperature. The experimental values of dielectric constant and dielectric loss are found in decreasing behavior with increase in frequency due to the characteristics of the interface capacitance in the diode and so that the similar behavior was observed in loss tangent. With the contribution of the series resistance, the results of the electrical conductivity analysis indicated direct proportionality to the frequency change. Additionally, electric modulus was discussed to represent the dielectric relaxation process in the diode structure.

引用

页码：63 / 67

页数：5

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