Pre-treatment effect of aqueous NH3 on conductivity enhancement and PL properties of GaN nanowires

被引:12
作者
Nabi, Ghulam [1 ]
Cao, Chuanbao [1 ]
Usman, Zahid [1 ]
Hussain, Sajad [1 ]
Khan, Waheed S. [1 ]
Butt, Faheem K. [1 ]
Ali, Zulfiqar [1 ]
Yu, Dapeng [2 ,3 ]
Fu, Xuewen [2 ,3 ]
机构
[1] Beijing Inst Technol, Sch Mat Sci & Engn, Res Ctr Mat Sci, Beijing 100081, Peoples R China
[2] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
[3] Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China
基金
高等学校博士学科点专项科研基金; 中国国家自然科学基金;
关键词
GaN; Semiconductors; Chemical vapor deposition; Electrical properties; PL properties; EMISSION;
D O I
10.1016/j.matlet.2011.11.096
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Untreated and pre-treated with aqueous NH3, GaN nanowires have been synthesized by nickel assisted CVD method at 1050 degrees C. The effect of pre-treating has been studied on the morphology, electrical and optical properties of the as-grown NWs. The resistivities of untreated and pre-treated NWs are calculated to be 40.5 Omega-cm and 2.85 Omega-cm respectively, which demonstrate that the conductivity of the pre-treated NWs has been enhanced significantly. The carrier concentrations (N-d) are calculated to he 8.54 x 10(17) cm(-3) and 3.65 x 10(18) cm(-3) whereas electron mobilities (mu) are 25 cm(2)/Vs and 86 cm(2)/Vs for untreated and pretreated NWs respectively. Due to dramatic increase in the carrier concentrations and mobilities, these pretreated GaN NWs are potentially applicable in low voltage and nano-scale electronics devices fabrications. Room temperature photoluminescence (PL) measurements of pre-treated NWs show a strong near-band-edge emission at 370 nm (3.35 eV) without blue and yellow emission indicating good optical quality of the NWs which have also potential application in optoelectronics and LEDs. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:19 / 22
页数:4
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