Advanced Modulation Response Analysis of High-Speed VCSELs

被引：0

作者：

Hamad, Wissam ^{[1
,2
]}

Sanayeh, Marwan Bou ^{[3
]}

Hamad, Mustapha ^{[3
]}

Hofmann, Werner ^{[1
,2
]}

机构：

[1] Tech Univ Berlin, Inst Solid State Phys, Hardenbergstr 36, D-10623 Berlin, Germany

[2] Tech Univ Berlin, Ctr Nanophoton, Hardenbergstr 36, D-10623 Berlin, Germany

[3] Notre Dame Univ, Fac Engn, ECCE Dept, POB 72, Zouk Mikayel, Lebanon

来源：

SEMICONDUCTOR LASERS AND APPLICATIONS VIII | 2018年 / 10812卷

关键词：

Direct Modulation; High-Speed VCSELs; Multi-Mode VCSELs; Small-Signal Analysis; Small-Signal-Modulation Response; Photon Lifetime; Transfer Functions;

D O I：

10.1117/12.2501216

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An innovative model to describe the small-signal modulation response of high-speed multi-mode vertical-cavity surface-emitting lasers (VCSELs) is presented. Using an advanced theoretical approach, multi-mode rate equations for these VCSELs are established. Moreover, in order to characterize the dynamic performance, a comprehensive analytical fitting function based on this novel approach is derived. This allows the extraction of consistently expanded figures of merit for these laser devices. The main concept of our novel approach is based on carrier reservoir splitting. This is a result of numerous effects such as mode competition and spatial hole burning (SHB). Furthermore, compared to other standard approaches, our novel model includes the effects of carrier diffusion, gain compression and inhomogeneous current injection. Beside the traditionally extracted figures of merit, this model gives insight into photon lifetime and the local distribution of the injection current.

引用

页数：6

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