Electronic structure and optical properties of boron-sulfur symmetric codoping in 4 x 4 graphene systems

被引:10
作者
Huang, Chen [1 ]
Han, Lihong [1 ]
Wu, Liyuan [1 ]
Su, Rui [2 ]
Chen, Jun [2 ]
Lu, Pengfei [1 ]
机构
[1] Beijing Univ Posts & Telecommun, Minist Educ, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
[2] Beijing Appl Phys & Computat Math, Beijing 100088, Peoples R China
基金
中国国家自然科学基金;
关键词
INITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; AUGMENTED-WAVE METHOD; DOPED GRAPHENE; BASIS-SET; BAND-GAP; NITROGEN; METALS;
D O I
10.1140/epjb/e2015-60064-y
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The electronic structure and optical properties of boron-doped, sulfur-doped, and boron-sulfur-codoped graphene systems have been studied by using first-principles calculations. Energy band structure and density of states are presented to describe the electronic properties. The doping can open the band gap and change the optical properties of graphene. For all optical properties of doped graphene systems, parallel (E-vertical bar vertical bar) polarization and perpendicular (E-+/-) polarization are presented. The optical properties under two kinds of polarizations are reflected in the range of peak height and the change of some extraordinary features.
引用
收藏
页码:1 / 7
页数:7
相关论文
共 31 条
[1]   PROJECTOR AUGMENTED-WAVE METHOD [J].
BLOCHL, PE .
PHYSICAL REVIEW B, 1994, 50 (24) :17953-17979
[2]   Atomically precise bottom-up fabrication of graphene nanoribbons [J].
Cai, Jinming ;
Ruffieux, Pascal ;
Jaafar, Rached ;
Bieri, Marco ;
Braun, Thomas ;
Blankenburg, Stephan ;
Muoth, Matthias ;
Seitsonen, Ari P. ;
Saleh, Moussa ;
Feng, Xinliang ;
Muellen, Klaus ;
Fasel, Roman .
NATURE, 2010, 466 (7305) :470-473
[3]   The electronic properties of graphene [J].
Castro Neto, A. H. ;
Guinea, F. ;
Peres, N. M. R. ;
Novoselov, K. S. ;
Geim, A. K. .
REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162
[4]  
Ci L, 2010, NAT MATER, V9, P430, DOI [10.1038/NMAT2711, 10.1038/nmat2711]
[5]   Plasmon spectroscopy of free-standing graphene films [J].
Eberlein, T. ;
Bangert, U. ;
Nair, R. R. ;
Jones, R. ;
Gass, M. ;
Bleloch, A. L. ;
Novoselov, K. S. ;
Geim, A. ;
Briddon, P. R. .
PHYSICAL REVIEW B, 2008, 77 (23)
[6]   Influence of S and P Doping in a Graphene Sheet [J].
Garcia Garcia, Alejandra ;
Baltazar, Samuel E. ;
Romero Castro, Aldo Humberto ;
Perez Robles, Juan Francisco ;
Rubio, Angel .
JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2008, 5 (11) :2221-2229
[7]   The rise of graphene [J].
Geim, A. K. ;
Novoselov, K. S. .
NATURE MATERIALS, 2007, 6 (03) :183-191
[8]   Carrier transport in two-dimensional graphene layers [J].
Hwang, E. H. ;
Adam, S. ;
Das Sarma, S. .
PHYSICAL REVIEW LETTERS, 2007, 98 (18)
[9]   Graphene: carbon in two dimensions [J].
Katsnelson, Mikhail I. .
MATERIALS TODAY, 2007, 10 (1-2) :20-27
[10]   Graphene versus carbon nanotubes for chemical sensor and fuel cell applications [J].
Kauffman, Douglas R. ;
Star, Alexander .
ANALYST, 2010, 135 (11) :2790-2797