Electronic and nonlinear optical absorption of an off-center hydrogenic donor impurity in GaAs/GaAlAs hexagonal quantum dot under electric field

被引:0
|
作者
Zhang, Zhi-Hai [1 ]
Yuan, Jian-Hui [2 ]
机构
[1] Yancheng Teachers Univ, Sch Phys & Elect, Yancheng 224007, Peoples R China
[2] Guangxi Med Univ, Dept Phys, Nanning 530021, Guangxi, Peoples R China
关键词
Quantum dot; Optical absorption; Electric field; Hydrogenic impurity; HYDROSTATIC-PRESSURE; MAGNETIC-FIELD; TEMPERATURE; WIRES;
D O I
10.1088/1402-4896/ac9a13
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this paper, the energy levels and nonlinear optical properties modulated by the applied electric field are analytically investigated where a hydrogenic impurity is confined in the GaAs/GaAlAs hexagonal quantum dot(QD). The linear and nonlinear optical absorption coefficients(OACs) have been obtained by using the compact density matrix and iterative approach. In the one electron approximation, an off-center hydrogenic donor impurity is considered, and the results show that the energy levels and nonlinear optical absorption of the dot depend strongly on the hydrogenic impurity. Especially, The overall results show that the geometric parameter and the magnitude of confinement potential of hexagonal QD, and the applied electric field act a very important role in the electronic and optical properties of hexagonal QD.
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页数:8
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