Semiconductor quantum dots

被引：7

作者：

Reithmaier, JP ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Wurzburg, D-97070 Wurzburg, Germany

来源：

IEEE CIRCUITS & DEVICES | 2003年 / 19卷 / 06期

关键词：

D O I：

10.1109/MCD.2003.1263457

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The self-assembly technique of semiconductor quantum-dot structures provided a breakthrough in the development of quantum-dot lasers. Although several properties make quantum-dot structures very interesting for several smaller scale applications, one can expect a strong extension to further areas by tailoring the dot structures in a way to realize specific device properties in the future. With this technique, it should be possible to realize gain material with temperature-stable emission wavelengths suitable for uncooled laser applications or broad-gain multiwavelength amplifications in next-generation semiconductor optical amplifiers (SOAs).

引用

页码：24 / 29

页数：6

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