Semiconductor quantum dots

被引:7
作者
Reithmaier, JP [1 ]
Forchel, A [1 ]
机构
[1] Univ Wurzburg, D-97070 Wurzburg, Germany
来源
IEEE CIRCUITS & DEVICES | 2003年 / 19卷 / 06期
关键词
D O I
10.1109/MCD.2003.1263457
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The self-assembly technique of semiconductor quantum-dot structures provided a breakthrough in the development of quantum-dot lasers. Although several properties make quantum-dot structures very interesting for several smaller scale applications, one can expect a strong extension to further areas by tailoring the dot structures in a way to realize specific device properties in the future. With this technique, it should be possible to realize gain material with temperature-stable emission wavelengths suitable for uncooled laser applications or broad-gain multiwavelength amplifications in next-generation semiconductor optical amplifiers (SOAs).
引用
收藏
页码:24 / 29
页数:6
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