Influence of stacking-fault energy on microstructural characteristics of ultrafine-grain copper and copper-zinc alloys

被引：274

作者：

Balogh, Levente ^{[4
]}

Ungar, Tamas ^{[4
]}

Zhao, Yonghao ^{[5
]}

Zhu, Y. T. ^{[6
]}

Horita, Zenji ^{[7
]}

Xu, Cheng ^{[1
,2
]}

Langdon, Terence G. ^{[1
,2
,3
]}

机构：

[1] Univ So Calif, Dept Aerosp & Mech Engn, Los Angeles, CA 90089 USA

[2] Univ So Calif, Dept Mat Sci, Los Angeles, CA 90089 USA

[3] Univ Southampton, Sch Engn Sci, Mat Res Grp, Southampton SO17 1BJ, Hants, England

[4] Eotvos Lorand Univ, Dept Mat Phys, H-1518 Budapest, Hungary

[5] Univ Calif Davis, Dept Chem Engn & Mat Sci, Davis, CA 95616 USA

[6] Los Alamos Natl Lab, Mat Phys & Applicat Div, Los Alamos, NM 87545 USA

[7] Kyushu Univ, Fac Engn, Dept Mat Sci & Engn, Fukuoka 8190395, Japan

来源：

ACTA MATERIALIA | 2008年 / 56卷 / 04期

基金：

匈牙利科学研究基金会; 美国国家科学基金会;

关键词：

copper alloys; high-pressure torsion; severe plastic deformation; stacking-fault energy; X-ray diffraction;

D O I：

10.1016/j.actamat.2007.10.053

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Experiments were conducted on samples of pure Cu and two Cu-Zn alloys to evaluate the influence of the stacking-fault energy (SFE) on microstructural development when processing using high-pressure torsion (HPT). Transmission electron microscopy, X-ray diffraction and hardness measurements were used for microstructural evaluation and the results show consistency between these techniques. Grain sizes in the nanometer range were formed at the edges of the HPT disks, larger submicrometer grains were formed in the disk centers and the measured grain sizes decreased with decreasing SFE. There was negligible twinning in pure Cu but the densities of dislocations and twins increased with increasing Zn content and thus with decreasing SFE. The values of the Vickers microhardness were lower in the centers of the disks for the two Cu-Zn alloy and this is consistent with the low SFE and slow rates of recovery. (C) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：809 / 820

页数：12

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