Graphene Film Growth on Silicon Carbide by Hot Filament Chemical Vapor Deposition

被引:2
作者
Rodriguez-Villanueva, Sandra [1 ,2 ]
Mendoza, Frank [3 ]
Weiner, Brad R. [2 ,4 ]
Morell, Gerardo [1 ,2 ]
机构
[1] Univ Puerto Rico, Coll Nat Sci, Dept Phys, Rio Piedras Campus, San Juan, PR 00925 USA
[2] Univ Puerto Rico, Mol Sci Res Ctr, San Juan, PR 00927 USA
[3] Univ Puerto Rico, Coll Arts & Sci, Dept Phys, Mayaguez Campus, Mayaguez, PR 00682 USA
[4] Univ Puerto Rico, Coll Nat Sci, Dept Chem, Rio Piedras Campus, San Juan, PR 00925 USA
关键词
graphene; hot filament chemical vapor deposition; methane gas; HIGH-QUALITY GRAPHENE; EPITAXIAL GRAPHENE; RAMAN-SPECTROSCOPY; LARGE-AREA; LAYERS; SUBLIMATION; GRAPHITE; XPS; CVD;
D O I
10.3390/nano12173033
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The electrical properties of graphene on dielectric substrates, such as silicon carbide (SiC), have received much attention due to their interesting applications. This work presents a method to grow graphene on a 6H-SiC substrate at a pressure of 35 Torr by using the hot filament chemical vapor deposition (HFCVD) technique. The graphene deposition was conducted in an atmosphere of methane and hydrogen at a temperature of 950 degrees C. The graphene films were analyzed using Raman spectroscopy, scanning electron microscopy, atomic force microscopy, energy dispersive X-ray, and X-ray photoelectron spectroscopy. Raman mapping and AFM measurements indicated that few-layer and multilayer graphene were deposited from the external carbon source depending on the growth parameter conditions. The compositional analysis confirmed the presence of graphene deposition on SiC substrates and the absence of any metal involved in the growth process.
引用
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页数:13
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