The effect of space charge on the characteristics of ZnS thin-film electroluminescent devices

被引：13

作者：

Gurin, NT ^{[1
]}

Sabitov, OY ^{[1
]}

Shlyapin, AV ^{[1
]}

机构：

[1] Ulyanovsk State Univ, Ulyanovsk 432700, Russia

来源：

TECHNICAL PHYSICS | 2001年 / 46卷 / 08期

关键词：

D O I：

10.1134/1.1395118

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

From experimental time dependences of the instantaneous brightness and the total current passing through a ZnS : Mn thin-film electroluminescent device, capacitance-voltage, charge-voltage, and current-voltage characteristics of the device are calculated. Conditions for negative differential resistance (NDR) of S and N types are found. An NDR mechanism that exploits the ionization and the recharge of deep donors and acceptors (zinc and sulfur vacancies) with the formation of space charge at the cathodic and anodic interfaces of the phosphor is suggested. (C) 2001 MAIK "Nauka/Interperiodica".

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页码：977 / 987

页数：11

相关论文

共 14 条

[1] INTERNAL CHARGE-PHOSPHOR FIELD CHARACTERISTICS OF ALTERNATING-CURRENT THIN-FILM ELECTROLUMINESCENT DEVICES [J].

ABUDAYAH, A ;

KOBAYASHI, S ;

WAGER, JF .

APPLIED PHYSICS LETTERS, 1993, 62 (07) :744-746

[2] AGING STUDIES OF ATOMIC LAYER EPITAXY ZNS-MN ALTERNATING-CURRENT THIN-FILM ELECTROLUMINESCENT DEVICES [J].

ABUDAYAH, A ;

WAGER, JF .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (07) :3593-3598

[3] ELECTRICAL CHARACTERIZATION OF ATOMIC LAYER EPITAXY ZNS-MN ALTERNATING-CURRENT THIN-FILM ELECTROLUMINESCENT DEVICES SUBJECT TO VARIOUS WAVE-FORMS [J].

ABUDAYAH, A ;

WAGER, JF ;

KOBAYASHI, S .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (09) :5575-5581

[4] CHARGE-TRANSFER IN ZNS-TYPE ELECTROLUMINESCENCE [J].

BRINGUIER, E .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (03) :1314-1325

[5] High-field conduction in semi-insulating ZnS films [J].

Bringuier, E .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1997, 75 (02) :209-228

[6]

GARYAINOV SA, 1970, SEMICONDUCTOR DEVICE

[7] Electroluminescence kinetics of film structures based on manganese-doped zinc sulfide [J].

Gurin, NT ;

Sabitov, OY .

TECHNICAL PHYSICS, 1999, 44 (05) :537-543

[8] Instantaneous emission brightness kinetics of zinc sulfide based electroluminescent thin-film emitters [J].

Gurin, NT ;

Sabitov, OY ;

Shlyapin, AV ;

Yudenkov, AV .

TECHNICAL PHYSICS LETTERS, 2001, 27 (02) :138-140

[9] SOME OPTICAL-PROPERTIES OF HIGH-RESISTIVITY ZINC-SULFIDE [J].

JOSEPH, JD ;

NEVILLE, RC .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) :1941-1945

[10]

Kroger F., 1964, CHEM IMPERFECT CRYST, V1st