The effect of alloying on the band engineering of two-dimensional transition metal dichalcogenides

被引：15
作者：
Dong, Jiansheng [1 ]
Zhao, Yipeng [1 ]
Ouyang, Gang [1 ]
机构：
[1] Hunan Normal Univ, Key Lab Low Dimens Quantum Struct & Quantum Contr, Minist Educ, Synerget Innovat Ctr Quantum Effects & Applicat S, Changsha 410081, Hunan, Peoples R China
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2019年 / 105卷
基金：
中国国家自然科学基金;
关键词：
ATOMIC-STRUCTURE; MONOLAYER; SIZE; PHOTOLUMINESCENCE; GROWTH; NANOSHEETS; ENERGY; MOS2; SE;
D O I：
10.1016/j.physe.2018.08.025
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In order to clarify the alloying effect on the band engineering in two-dimensional transition metal dichalcogenides (2D-TMDs) at the atomic level, we present a quantitative study to address a deeper insight on the relationship between the bond identities and band shift based on the bond relaxation mechanism and valance-force-field approach. We find the interaction parameter in 2D-TMDs alloys could be obtained from the lattice distortion energy and further reveal the bowing mechanism of composition tunable bandgap in 2D-TMDs. Our results show that the composition-dependent band shift is in good agreement with the available evidence, which suggest the tunable electronic properties of 2D-TMD alloys that realized by modulating the chemical composition could be helpful for nanoelectronic applications.
引用
收藏
页码：90 / 96
页数：7
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